BCW61CLT1 datasheet, PDF - EEWORLD Datasheet

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BCW61CLT1: Description100mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size200KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BCW61CLT1 Overview

100mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

BCW61CLT1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	0.225 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Maximum off time (toff)	800 ns
Maximum opening time (tons)	150 ns
VCEsat-Max	0.55 V
Base Number Matches	1

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BCW61CLT1 Related Products

	BCW61CLT1	BCW61BLT3	BCW61CLT3	BCW61DLT3
Description	100mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB	Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB	100mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-based maximum capacity	6 pF	6 pF	6 pF	6 pF
Collector-emitter maximum voltage	32 V	32 V	32 V	32 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	80	100	100
JEDEC-95 code	TO-236AB	TO-236AB	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power consumption environment	0.225 W	0.225 W	0.225 W	0.225 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	800 ns	800 ns	800 ns	800 ns
Maximum opening time (tons)	150 ns	150 ns	150 ns	150 ns
VCEsat-Max	0.55 V	0.55 V	0.55 V	0.55 V
Base Number Matches	1	1	1	1

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