BFR193TF datasheet, PDF - EEWORLD Datasheet

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BFR193TF: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size93KB，4 Pages; ManufacturerVishay Telefunken (Vishay); Websitehttp://www.vishay.com

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Transistor,

BFR193TF Parametric

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Reach Compliance Code	unknown
Base Number Matches	1

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VISHAY

BFR193TF

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Description

The main purpose of this bipolar transistor is broad-

band amplification up to 2 GHz. In the space-saving

3-pin surface-mount SOT490 package electrical per-

formance and reliability are taken to a new level cov-

ering a smaller footprint on PC boards than previous

packages. In addition to space savings, the SOT490

provides a higher level of reliability than other 3-pin

packages, such as more resistance to moisture. Due

to the short length of its leads the SOT490 is also re-

ducing package inductances resulting in some better

electrical performance. All of these aspects make this

device an ideal choice for demanding RF applica-

tions.

16867

Electrostatic sensitive device.

Observe precautions for handling.

Features

• Low noise figure

• High transition frequency f

= 8 GHz

• Excellent large-signal behaviour

amplifiers.

Mechanical Data

Typ:

BFR193TF

Case:

Plastic case (SOT 490)

Weight:

2.5 mg

Pinning:

1 = Collector, 2 = Base, 3 = Emitter

Applications

For low noise and high gain applications such as pow-

er amplifiers up to 2 GHz and for linear broadband

Parts Table

Part

BFR193TF

Marking

SOT490

Package

Absolute Maximum Ratings

amb

= 25 °C, unless otherwise specified

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature range

amb

≤

45 °C

Test condition

Symbol

CBO

CEO

EBO

tot

stg

Value

420

150

-65 to +150

Unit

°C

Maximum Thermal Resistance

Parameter

Junction ambient

Test condition

Symbol

thJA

Value

250

Unit

K/W

on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35 µm Cu

Electrical DC Characteristics

amb

= 25 °C, unless otherwise specified

Parameter

Collector-emitter cut-off current

Test condition

= 20 V, V

= 0

Symbol

CES

Min

Typ.

Max

100

Unit

µA

Document Number 85103

Rev. 2, 23-Sep-02

www.vishay.com

BFR193TF

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of

Vishay Semiconductor GmbH

1. Meet all present and future national and international statutory requirements.

VISHAY

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH

has been able to use its policy of continuous improvements to eliminate the

use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH

can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further

notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 85103

Rev. 2, 23-Sep-02

www.vishay.com

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