The UT54ACS365 and UT54ACTS365 are non-inverting hex
buffer and line driver with three-state outputs. The output en-
ables (OE1 and OE2) control the three-state outputs. If OE1 or
OE2 is high, the outputs will be in a high impedance state. For
data, both OE1 and OE2 must be low.
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
INPUTS
OE1
L
L
X
H
OE2
L
L
H
X
A
L
H
X
X
OUTPUT
Y
L
H
Z
Z
PINOUTS
16-Pin DIP
Top View
OE1
A1
Y1
A2
Y2
A3
Y3
V
SS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
OE2
A6
Y6
A5
Y5
A4
Y4
16-Lead Flatpack
Top View
OE1
A1
Y1
A2
Y2
A3
Y3
V
SS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
OE2
A6
Y6
A5
Y5
A4
Y4
LOGIC SYMBOL
OE1
OE2
(1)
(15)
&
EN
A1
A2
A3
A4
A5
A6
(2)
(4)
(6)
(10)
(12)
(14)
(3)
(5)
(7)
(9)
(11)
(13)
Y1
Y2
Y3
Y4
Y5
Y6
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and
IEC Publication 617-12.
1
LOGIC DIAGRAM
OE2
(15)
A6
(14)
A5
(12)
A4
(10)
A3
(6)
A2
(4)
OE1
(1)
A1
(2)
(13)
Y6
Y5
(11)
Y4
(9)
Y3
(7)
Y2
(5)
Y1
(3)
2
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
3
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Three-state output leakage current
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
ΔI
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 12.0mA
I
OL
= 100μA
I
OH
= -12.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
15
15
pF
pF
1.8
10
1.6
mW/
MHz
μA
mA
-12
mA
.7V
DD
V
DD
- 0.25
-30
30
.5V
DD
.7V
DD
-1
1
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
0.40
0.25
V
V
OH
V
μA
I
OZ
I
OS
I
OL
-300
12
300
mA
mA
4
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
I have a question. What programs do you guys usually use SI to read? I just started using SI recently. I used SI to read a project file written in VS2005, which I am not familiar with. When reading in...
In order to consolidate the C language knowledge of the forum members, I will occasionally show you various C language problems I encounter or the better problems I see in this way of answering. The f...
On the Youjian 6410 platform, there are several subdirectories under the directory D:\WINCE600\PLATFORM\SMDK6410\SRC\BOOTLOADER\: \EBOOT.WHIMORY \NBL1.IROM_SD \NBL1.LSB \NBL2. What are the functions o...
I use FET-Pro430 to download the program in IAR. The configuration is as shown in the figure, but the dynamic link library error always occurs. Please tell me the solution....
Is there any way to avoid the part where the FIR filter starts rising from zero? [img]file:///C:\Documents and Settings\Administrator\Application Data\Tencent\Users\465223499\QQ\WinTemp\RichOle\DM8S@Y...
[font=sans-serif]The heart of a boy in first love is like the simplest signal amplifier, and the girl controls the input end. The smallest signal of your happiness can bring him great happiness. Simil...
Nios II is a configurable 16-/32-bit RISC processor. Combined with a rich set of peripheral-specific instructions and hardware acceleration units, it provides a highly flexible and powerful SOPC sy...[Details]
Is pure electric vehicles a false proposition for long-distance driving? At least from my personal perspective, based on current technological and infrastructure standards, I believe so. Below, I'l...[Details]
Topics: Bring Your Own Device (BYOD) trends; the impact of using employees' own mobile devices to control access to work facilities and equipment on information security; and ways to securely imple...[Details]
Limited vocabulary recognition
According to the number of characters, words or short sentences in the vocabulary, it can be roughly divided into: less than 100 is small vocabulary; 100-1000 is...[Details]
In mobile technology, sensors are the primary input for measured signals and form a component of a sensor system. They include sensitive and transducer elements connected to carriers and circuits. ...[Details]
Recently,
Xpeng Motors and Xinlian Integrated Circuit jointly announced the mass production of China's first hybrid silicon carbide product.
Designed and developed by Xpeng Motors and joint...[Details]
Core point: The automotive industry chain and the humanoid robot industry have collaborative advantages in hardware, software, and scenarios. Upstream and downstream companies in the automotive ind...[Details]
As AI accelerates across industries, the demand for data center infrastructure is also growing rapidly.
Keysight Technologies, in collaboration with Heavy Reading, released the "Beyo...[Details]
Pure electric vehicles, structurally speaking, have components such as a power battery. In addition to the power battery, a small battery also powers some low-voltage electrical components and even...[Details]
With the advent of the electric car era, the number of pure electric vehicles has increased significantly, but many car owners do not know how to properly maintain pure electric vehicles. In additi...[Details]
With the continuous development of the industrial automation industry, we are seeing an increasing number of intelligent devices using flexible, efficient, and precise robotic arms to p...[Details]
The 2025 China International Automotive Testing Exhibition will be held at the Shanghai World Expo Exhibition and Convention Center from August 27 to 29, 2025.
Clacton Seafront, UK, ...[Details]
Linear motor modules have become the "sweet spot" in various fields due to their advantages such as long stroke, fast speed, high precision, smooth operation and long life. Different models of line...[Details]
A pure sine wave inverter has a good output waveform with very low distortion, and its output waveform is essentially the same as the AC waveform of the mains power grid. In fact, the AC power prov...[Details]
As the range of electric vehicles continues to increase, driving electric vehicles for long-distance travel has become a trend. For high-speed travel, how much impact will high-speed driving of ele...[Details]
Embedded System
京公网安备 11010802033920号
EEWORLD
