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DZ540N24B01

Description
Rectifier Diode, 1 Phase, 1 Element, 732A, 2400V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size263KB,10 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

DZ540N24B01 Overview

Rectifier Diode, 1 Phase, 1 Element, 732A, 2400V V(RRM), Silicon,

DZ540N24B01 Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current14000 A
Number of components1
Phase1
Number of terminals2
Maximum output current732 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2400 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Base Number Matches1
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DZ540N
DZ540N
DZ540N…B01
Elektrische Eigenschaften / Electrical properties
Kenndaten
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
Elektrische Eigenschaften
T
Thermische Eigenschaften
vj
= -40°C... T
vj max
V
RRM
2000
2400
2100
2500
2200 V
2600 V
2300 V
2700 V
1150 A
540 A
732 A
16.500 A
14.000 A
1.360.000 A²s
980.000 A²s
T
vj
= +25°C... T
vj max
V
RSM
I
FRMSM
T
C
= 100°C
T
C
=
73°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FAVM
I
FSM
I²t
T
vj
= T
vj max
, i
F
= 2200 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
, v
R
= V
RRM
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
v
F
V
(TO)
r
T
i
R
V
ISOL
max.
1,64 V
0,78 V
0,31 mΩ
max.
40 mA
3,6 kV
3,0 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module,
Θ
= 180° sin R
thJC
pro Modul / per Module, DC
max.
max.
0,0780 °C/W
0,0745 °C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
prepared by: C. Drilling
approved by: M. Leifeld
date of publication:
revision:
pro Modul / per Module
R
thCH
T
vj max
T
c op
T
stg
max.
0,02 °C/W
150 °C
- 40...+150 °C
- 40...+150 °C
11.05.06
2
BIP AC/ 97-08-08, R.Jörke
A111/97
Seite/page
1/10

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