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F25L08PA-100PIG

Description
3V Only 8 Mbit Serial Flash Memory with Dual
Categorystorage    storage   
File Size493KB,32 Pages
ManufacturerESMT
Websitehttp://www.esmt.com.tw/
Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.
Download Datasheet Parametric View All

F25L08PA-100PIG Overview

3V Only 8 Mbit Serial Flash Memory with Dual

F25L08PA-100PIG Parametric

Parameter NameAttribute value
MakerESMT
Parts packaging codeSOIC
package instructionSOP,
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum clock frequency (fCLK)100 MHz
JESD-30 codeR-PDSO-G8
length4.9 mm
memory density8388608 bi
Memory IC TypeFLASH
memory width1
Number of functions1
Number of terminals8
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX1
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width3.9 mm

F25L08PA-100PIG Preview

Download Datasheet
ESMT
Flash
FEATURES
Single supply voltage 2.7~3.6V
Standard, Dual SPI
Speed
- Read max frequency: 33MHz
- Fast Read max frequency: 50MHz; 100MHz
- Fast Read Dual max frequency: 50MHz / 100MHz
(100MHz / 200MHz equivalent Dual SPI)
Low power consumption
- Active current: 35 mA
- Standby current: 30
μ
A
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Byte programming time: 7
μ
s (typical)
- Page programming time: 1.5 ms (typical)
Erase
- Chip erase time 10 sec (typical)
- Block erase time 1 sec (typical)
- Sector erase time 90 ms (typical)
Page Programming
- 256 byte per programmable page
F25L08PA
Operation Temperature Condition -40°C~85°C
3V Only 8 Mbit Serial Flash Memory with Dual
Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over
Byte Program operations
Lockable 4K bytes OTP security sector
SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
End of program or erase detection
Write Protect (
WP
)
Hold Pin ( HOLD )
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Product ID
F25L08PA –50PIG
F25L08PA –100PIG
F25L08PA –50PAIG
F25L08PA –100PAIG
F25L08PA –50DIG
F25L08PA –100DIG
Speed
50MHz
Package
8 lead SOIC
150mil
150mil
200mil
200mil
300mil
300mil
COMMENTS
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
100MHz 8 lead SOIC
50MHz
8 lead SOIC
100MHz 8 lead SOIC
50MHz
100MHz
8 lead PDIP
8 lead PDIP
GENERAL DESCRIPTION
The F25L08PA is a 8Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory
devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 4,096 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction. The device also can be
programmed to decrease total chip programming time with Auto
Address Increment (AAI) programming.
The device features sector erase architecture. The memory array
is divided into 256 uniform sectors with 4K byte each; 16 uniform
blocks with 64K byte each. Sectors can be erased individually
without affecting the data in other sectors. Blocks can be erased
individually without affecting the data in other blocks. Whole chip
erase capabilities provide the flexibility to revise the data in the
device. The device has Sector, Block or Chip Erase but no page
erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date:
Jul. 2009
Revision: 1.3
1/32
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