EL2008C
EL2008C
55 MHz 1 Amp Buffer Amplifier
Features
• High slew rate 2500 V/µs
• Wide bandwidth 100MHz @ R
L
=
50Ω and 55MHz @ R
L
= 10Ω
• Output current 1A continuous
• Output impedance 1Ω
• Quiescent current 13mA
• Short circuit protected
• Power package with isolated metal
tab
General Description
The EL2008C is a patented high speed bipolar monolithic buffer
amplifier designed to provide currents over 1 amp at high frequencies,
while drawing only 13 mA of quiescent supply current. The
EL2008C's 1500 V/µs slew rate and 55 MHz bandwidth driving a 10Ω
load is second only to the EL2009 and insures stability in fast op amp
feedback loops. Elantec has applied for patents on unique circuitry
within the EL2008C.
Used as an open loop buffer, the EL2008C's low output impedance
(1Ω) gives a gain of 0.99 when driving a 100Ω load and 0.9 driving a
10Ω load. The EL2008C has output short circuit current limiting
which will protect the device under both a DC fault condition and AC
operation with reactive loads.
The EL2008C is constructed using Elantec's proprietary Complemen-
tary Bipolar process that produces PNP and NPN transistors with
essentially identical AC and DC characteristics. In the EL2008C, the
Complementary Bipolar process also insulates the package's metal
heat sink tab from all supply voltages. Therefore the tab may be
mounted to an external heat sink or the chassis without an insulator.
The EL2008CT is specified for operation over the 0°C to +75°C tem-
perature range and is provided in a 5-lead TO-220 plastic power
package.
Applications
•
•
•
•
•
•
Video distribution amplifier
Fast op amp booster
Flash converter driver
Motor driver
Pulse transformer driver
A.T.E. pin driver
Ordering Information
Part No.
EL2008CT
Temp. Range
0°C to +75°C
Package
TO-220
Outline#
MDP0028
Connection Diagrams
5-Pin TO-220
Simplified Schematic
December 23, 1999
Top View
Manufactured under U.S. Patent No. 4,833,424 and 4,827,223 and U.K. Patent No. 2217134.
Note:
All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2001 Elantec Semiconductor, Inc.
EL2008C
EL2008C
55 MHz 1 Amp Buffer Amplifier
Absolute Maximum Ratings
(T
V
S
V
IN
Supply Voltage (V+ - V-)
Input Voltage
A
= 25°C)
±18V or 36V
±15 or V
S
The maximum power dissipation depends on package type, ambient temperature and heat
sinking. See the characteristic curves for more details.
If the input exceeds the ratings shown (or the supplies) or if the input voltage exceeds ±7.5V
then the input current must be limited to ±50 mA. See the application hints for information.
I
IN
P
D
Input Current (See note above)
Power Dissipation
±50 mA
See Curves
T
A
T
J
T
ST
T
LD
Operating Temperature Range
Operating Junction Temp
Storage Temp Range
Lead Solder Temp <10 seconds
0°C to +75°C
175°C
-65°C to +150°C
300°C
Important Note:
All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually performed during
production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test equipment, specifically the LTX77
Series system. Unless otherwise noted, all tests are pulsed tests, therefor T
J
= T
C
= T
A
.
Test Level
I
II
III
IV
V
Test Procedure
100% production tested and QA sample tested per QA test plan QCX0002.
100% production tested at T
A
= 25°C and QA sample tested at T
A
= 25°C, T
MAX
and T
MIN
per QA test plan QCX0002.
QA sample tested per QA test plan QCX0002.
Parameter is guaranteed (but not tested) by Design and Characterization Data.
Parameter is typical value at T
A
= 25°C for information purposes only.
Electrical Characteristics
V
S
= ±15V, R
S
= 50Ω, unless otherwise specified
Test Conditions
Parameter
V
OS
Description
Output Offset Voltage
V
IN
0
Load
×
Temp
25°C
T
MIN
,
T
MAX
I
IN
Input Current
0
×
25°C
T
MIN
,
T
MAX
R
IN
A
V1
A
V2
A
V3
V
01
V
02
R
01
R
02
I
O
Input Impedance
Voltage Gain
Voltage Gain
Voltage Gain, V
S
= ±15V
Output Voltage Swing
Output Voltage Swing
Output Impedance
Output Impedance
Output Current
±12V
±10V
±10V
±3V
±14V
±12V
±10V
±10V
±12V
100Ω
×
10Ω
10Ω
100Ω
10Ω
±10 mA
±1A
[1]
Limits
Min
-40
-50
-35
-50
0.5
0.985
0.88
0.87
±13
±10.5
±11
1.8
0.8
1.25
1
12
60
2
2500
1500
800
7
17
26
1.8
2.5
1.15
2
0.9995
0.91
0.89
-5
Typ
10
Max
+40
+50
+35
+50
Test Level
I
IV
I
IV
I
I
I
I
I
I
I
I
I
IV
I
I
I
V
V
V
V
Units
mV
mV
µA
µA
MΩ
V/V
V/V
V/V
V
V
Ω
Ω
A
A
mA
dB
mV/V
V/µs
V/µs
V/µs
ns
25°C
25°C
25°C
25°C
25°C
25°C
25°C
25°C
25°C
T
MIN
,
T
MAX
I
S
PSRR
V
S
+, V
S
-
SR
1
SR
2
t
r
, t
f
Supply Current
Supply Rejection
[2]
Supply Sensitivity
Slew Rate
[4]
Slew Rate
[5]
Rise/Fall Time
[3]
0
0
±10V
±10V
±5V
100 mV
×
×
×
50Ω
10Ω
10Ω
10Ω
25°C
25°C
25°C
25°C
25°C
25°C
25°C
2
EL2008C
EL2008C
55 MHz 1 Amp Buffer Amplifier
Electrical Characteristics
V
S
= ±15V, R
S
= 50Ω, unless otherwise specified
Test Conditions
Parameter
BW
C
IN
THD
1.
2.
3.
4.
5.
Description
-3 dB Bandwidth
Input Capacitance
V
IN
100 mV
Load
10Ω
Temp
25°C
25°C
25°C
Min
Limits
Typ
55
25
1
Max
Test Level
V
V
I
Units
MHz
pF
%
Force the input to +12V and the output to +10V and measure the output current. Repeat with -12V and -10V on the output.
V
S
= ±4.5V then V
S
is changed to ±18V.
V
S
+ = +15V, V
S
- = -4.5V then V
S
- is changed to -18V and V
S
- = -15V, V
S
+ = +4.5V then V
S
+ is changed to +18V.
Slew Rate is measured between V
OUT
= +5V and -5V.
7:Slew Rate is measured between V
OUT
= +2.5V and -2.5V.
3
Analog electronics
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