BPW76
Silicon NPN Phototransistor
Description
BPW76 is a high sensitive silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically sealed
metal case.
Its flat glass window makes it ideal for applications with
external optics.
A base terminal is available to enable biasing and sensi-
tivity control.
Features
D
D
D
D
D
D
D
D
D
Hermetically sealed case
Flat window
Very wide viewing angle
ϕ
=
±
40
°
Exact central chip alignment
Long range light barrier with an additional optics
Base terminal available
High photo sensitivity
Suitable for visible and near infrared radiation
Selected into sensitivity groups
94 8401
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
R
thJC
Value
80
70
5
50
100
250
125
–55...+125
260
400
150
Unit
V
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
K/W
t
p
/T = 0.5, t
p
10 ms
T
amb
25
°
C
x
x
t
x
5s
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
1 (6)
BPW76
Basic Characteristics
T
amb
= 25
_
C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
Test Conditions
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E=0
Symbol
V
(BR)CEO
I
CEO
C
CEO
ϕ
Min
70
Typ
Max
Unit
V
nA
pF
deg
nm
nm
V
E
e
=1 mW/cm
2
,
l
=950nm,
I
C
=0.1 mA
V
S
=5V, I
C
=5mA, R
L
=100
W
V
S
=5V, I
C
=5mA, R
L
=100
W
V
S
=5V, I
C
=5mA, R
L
=100
W
l
p
l
0.5
t
on
t
off
f
c
V
CEsat
1
6
±40
850
620...980
0.15
6
5
110
100
0.3
m
s
m
s
kHz
Type Dedicated Characteristics
T
amb
= 25
_
C
Parameter
Collector Light Current
g
Test Conditions
E
e
=1mW/cm
2
,
l
=950nm, V
CE
=5V
Type
BPW76A
BPW76B
Symbol
I
ca
I
ca
Min
0.4
0.6
Typ
0.6
1.2
Max
0.8
Unit
mA
mA
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
800
P
tot
– Total Power Dissipation ( mW )
I
CEO
– Collector Dark Current ( nA )
10
6
10
5
10
4
10
3
10
2
10
1
10
0
0
94 8342
600
R
thJC
400
200
R
thJA
0
25
50
75
100
125
150
T
amb
– Ambient Temperature (
°C
)
V
CE
=20V
E=0
20
94 8343
50
100
150
T
amb
– Ambient Temperature (
°C
)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Collector Dark Current vs. Ambient Temperature
2 (6)
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
BPW76
C
CEO
– Collector Emitter Capacitance ( pF )
3.5
I
ca rel
– Relative Collector Current
3.0
2.5
2.0
1.5
1.0
0.5
0
0
94 8344
20
16
f=1MHz
V
CE
=5V
E
e
=1mW/cm
2
l
=950nm
12
8
4
0
0.1
1
10
100
V
CE
– Collector Emitter Voltage ( V )
50
100
150
94 8247
T
amb
– Ambient Temperature (
°C
)
Figure 3. Relative Collector Current vs. Ambient Temperature
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
12
10
8
6
4
2
0
t
on
V
CE
=5V
R
L
=100
W
l
=950nm
1
0.1
V
CE
=5V
0.01
l
=950nm
t
on
/ t
off
– Turn on / Turn off Time (
m
s )
10
I
ca
– Collector Light Current ( mA )
t
off
0.001
0.01
94 8345
0.1
1
10
94 8253
0
4
8
12
16
E
e
– Irradiance ( mW / cm
2
)
I
C
– Collector Current ( mA )
Figure 4. Collector Light Current vs. Irradiance
1
I
ca
– Collector Light Current ( mA )
Figure 7. Turn On/Turn Off Time vs. Collector Current
BPW 76 A
l
=950nm
E
e
=1 mW/cm
2
0.5 mW/cm
2
S (
l
)
rel
– Relative Spectral Sensitivity
100
94 8348
1.0
0.8
0.6
0.4
0.2
0
400
0.2 mW/cm
2
0.1
0.1 mW/cm
2
0.05 mW/cm
2
0.01
0.1
1
10
600
94 8346
V
CE
– Collector Emitter Voltage ( V )
l
– Wavelength ( nm )
800
1000
Figure 5. Collector Light Current vs. Collector Emitter Voltage
Figure 8. Relative Spectral Sensitivity vs. Wavelength
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
3 (6)
BPW76
0°
10
°
20
°
30°
S
rel
– Relative Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8347
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
4 (6)
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
BPW76
Dimensions in mm
96 12175
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
5 (6)
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