VISHAY
BFR93AF
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 1 GHz. In the space-saving
3-pin surface-mount SOT490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT490 is also re-
ducing package inductances resulting in some better
electrical performance. All of these aspects make this
device an ideal choice for demanding RF applica-
tions.
1
2
3
16867
Electrostatic sensitive device.
Observe precautions for handling.
Features
• High power gain
• High transition frequency
• Low noise figure
Mechanical Data
Typ:
BFR93AF
Case:
Plastic case (SOT 490)
Weight:
2.5 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Applications
Wide band amplifier up to GHz range.
Parts Table
Part
BFR93AF
R2
Marking
SOT490
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
12
2
50
200
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Parameter
Junction ambient
1)
1/
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 µm Cu
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Test condition
V
CE
= 20 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
Symbol
I
CES
I
CBO
Min
Typ.
Max
100
100
Unit
µA
nA
Document Number 85099
Rev. 2, 23-Sep-02
www.vishay.com
1
BFR93AF
Vishay Semiconductors
Parameter
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
DC forward current transfer ratio
Test condition
V
EB
= 2 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 50 mA, I
B
= 5 mA
V
CE
= 5 V, I
C
= 30 mA
Symbol
I
EBO
V
(BR)CEO
V
CEsat
h
FE
40
12
0.1
90
0.4
150
Min
Typ.
Max
10
VISHAY
Unit
µA
V
V
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Test condition
V
CE
= 5 V, I
C
= 30 mA, f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 5 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 8 V, I
C
= 5 mA, Z
S
= 50
Ω,
f
= 800 MHz
V
CE
= 8 V, I
C
= 25 mA, Z
S
= 50
Ω,
f = 800 MHz
Power gain
Transducer gain
Linear output voltage - two tone
intermodulation test
Third order intercept point
V
CE
= 8 V, Z
S
= 50
Ω,
Z
L
= Z
Lopt
, I
C
= 25 mA, f = 800 MHz
V
CE
= 8 V, I
C
= 25 mA, f = 800
MHz, Z
O
= 50
Ω
V
CE
= 8 V, I
C
= 25 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz, Z
S
=
Z
L
= 50
Ω
V
CE
= 8 V, I
C
= 25 mA, f = 800 MHz
Symbol
f
T
C
cb
C
ce
C
eb
F
F
G
pe
|S
21e
|
2
V
1
= V
2
Min
Typ.
6
0.45
0.2
1.5
1.6
2.1
15
14
260
Max
Unit
GHz
pF
pF
pF
dB
dB
dB
dB
mV
IP
3
31
dBm
Document Number 85099
Rev. 2, 23-Sep-02
www.vishay.com
2
VISHAY
Package Dimensions in mm or Inches (mm)
BFR93AF
Vishay Semiconductors
ISO Method E
16866
Document Number 85099
Rev. 2, 23-Sep-02
www.vishay.com
3
BFR93AF
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85099
Rev. 2, 23-Sep-02
www.vishay.com
4
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