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BF998B

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size181KB,8 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
Download Datasheet Parametric Compare View All

BF998B Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

BF998B Parametric

Parameter NameAttribute value
MakerTEMIC
Reach Compliance Codeunknown
Shell connectionSOURCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage12 V
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)16.5 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BF998/BF998R
N-Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages in UHF- and VHF-tuner
Features
D
D
D
D
D
Integrated gate protection diodes
Low noise figure
Low feedback capacitance
High cross modulation performance
Low input capacitance
D
High AGC-range
D
High gain
D
Available with reverse pin configuration (BF 998 R)
on request
2
1
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
BF998 Marking: MO
Plastic case (SOT 143)
1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1
BF998R Marking: MOR
Plastic case (SOT 143R)
1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1
Absolute Maximum Ratings
Parameters
Drain source voltage
Drain current
Gate 1/gate 2-source peak current
Gate 1/gate 2-source voltage
Total power dissipation
Channel temperature
Storage temperature range
T
amb
60
°C
Symbol
V
DS
I
D
±I
G1/G2SM
±V
G1S/G2S
P
tot
T
Ch
T
stg
Value
12
30
10
7
200
150
–65 ... +150
Unit
V
mA
mA
V
mW
°C
°C
Maximum Thermal Resistance
Parameters
Channel ambient on glass fibre printed board
25 x 20 x 1.5 mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 07-Mar-97
1 (8)

BF998B Related Products

BF998B BF998R BF998RB BF998A BF998RA BF998
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Shell connection SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 12 V 12 V 12 V 12 V 12 V 12 V
Maximum drain current (ID) 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Minimum power gain (Gp) 16.5 dB 16.5 dB 16.5 dB 16.5 dB 16.5 dB 16.5 dB
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Maker TEMIC - - TEMIC TEMIC TEMIC
Base Number Matches 1 1 1 1 1 -
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