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BYV27-600Z

Description
Rectifier Diode, 1 Phase, 1 Element, 1.6A, 600V V(RRM), Silicon, DO-15L, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size307KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric View All

BYV27-600Z Overview

Rectifier Diode, 1 Phase, 1 Element, 1.6A, 600V V(RRM), Silicon, DO-15L, 2 PIN

BYV27-600Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
package instructionDO-15L, 2 PIN
Reach Compliance Codeunknown
applicationSUPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current40 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BL
FEATURES
Low cost
GALAXY ELECTRICAL
BYV27-50(Z) - - - BYV27-600(Z)
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 2.0, 1.9,1.6 A
SUPER FAST RECTIFIERS
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and sim ilar solvents
DO - 15
MECHANICAL DATA
Case: JEDEC DO-15,m olded plastic
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 gram s
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYV27 BYV27 BYV27 BYV27 BYV27 BYV27 BYV27
UNITS
-100
-50
-150
-200
-300
-400
-600
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
2.0
150
105
150
200
140
200
300
210
300
1.9
400
280
400
600
420
600
1.6
V
V
V
A
Peak forw ard surge current
10ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
I
FSM
50.0
40.0
A
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.98
5.0
100.0
35
62
100
- 55 ----- + 125
- 55 ----- + 150
1.05
1.25
V
A
50
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V DC.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 1764114
BL
GALAXY ELECTRICAL
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