BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Features
D
Low power applications
D
Low noise figure
D
High transition frequency
2
1
1
2
13 653
13 566
13 654
13 566
3
4
4
3
BFP182TW Marking: W82
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
BFP182TRW Marking: WSG
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
94 9279
13 579
3
4
BFP182T Marking: 82P
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85013
Rev. 3, 20-Jan-99
www.vishay.de
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BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
15
10
2
35
200
150
–65 to +150
Unit
V
V
V
mA
mW
°
C
°
C
T
amb
≤
60
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Value
450
Unit
K/W
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Document Number 85013
Rev. 3, 20-Jan-99
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 15 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 15 mA, I
B
=1.5 mA
V
CE
= 6 V, I
C
= 5 mA
V
CE
= 8 V, I
C
= 20 mA
Symbol Min Typ Max Unit
I
CES
100
m
A
I
CBO
100 nA
I
EBO
1
m
A
V
(BR)CEO
10
V
V
CEsat
0.1 0.4
V
h
FE
50 90 150
h
FE
100
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Transition frequency
q
y
Test Conditions
V
CE
= 6 V, I
C
= 5 mA, f = 500 MHz
V
CE
= 8 V, I
C
= 20 mA, f = 500 MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
Collector-emitter capacitance V
CE
= 8 V, f = 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
Noise figure
V
CE
= 6 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
f = 900 MHz
V
CE
= 6 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
f = 1.75 GHz
Power gain
V
CE
= 8 V, I
C
= 20 mA, Z
S
= 50
W
,
Z
L
= Z
Lopt
, f = 900 MHz
V
CE
= 8 V, I
C
= 20 mA, Z
S
= 50
W
,
Z
L
= Z
Lopt
, f = 1.75 GHz
Transducer gain
V
CE
= 8 V, I
C
= 20 mA, Z
0
= 50
W
,
f = 900 MHz
Symbol
f
T
f
T
C
cb
C
ce
C
eb
F
F
G
pe
G
pe
S
21e
2
Min
Typ
5.5
7.5
0.3
0.2
0.7
1.5
2.0
18
12
15
Max
Unit
GHz
GHz
pF
pF
pF
dB
dB
dB
dB
dB
Document Number 85013
Rev. 3, 20-Jan-99
www.vishay.de
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3 (6)
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
Dimensions of BFP182TW in mm
96 12237
Dimensions of BFP182TRW in mm
96 12238
www.vishay.de
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FaxBack +1-408-970-5600
4 (6)
Document Number 85013
Rev. 3, 20-Jan-99
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
Dimensions of BFP182T in mm
96 12240
Document Number 85013
Rev. 3, 20-Jan-99
www.vishay.de
•
FaxBack +1-408-970-5600
5 (6)
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