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JANTX1N5291UR

Description
Current Regulator Diode, 0.56mA I(S), 1.1V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size94KB,17 Pages
ManufacturerCompensated Devices Inc.
Download Datasheet Parametric View All

JANTX1N5291UR Overview

Current Regulator Diode, 0.56mA I(S), 1.1V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2

JANTX1N5291UR Parametric

Parameter NameAttribute value
MakerCompensated Devices Inc.
package instructionHERMETIC SEALED PACKAGE-2
Reach Compliance Codeunknown
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeCURRENT REGULATOR DIODE
JEDEC-95 codeDO-213AB
JESD-30 codeO-XELF-R2
Maximum limit voltage1.1 V
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
GuidelineMIL-19500/463G
Nominal regulation current (Ireg)0.56 mA
surface mountYES
technologyFIELD EFFECT
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 2 July 2004.
INCH-POUND
MIL-PRF-19500/463G
2 April 2004
SUPERSEDING
MIL-PRF-19500/463F
24 June 2003
* PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR, TYPES 1N5283-1
THROUGH 1N5314-1, AND 1N5283UR-1 THROUGH 1N5314UR-1, 1N7048-1 THROUGH 1N7055-1,
1N7048UR-1 THROUGH 1N7055UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
* The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 100 volt, silicon, current regulator diodes.
Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JANKC).
1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.10) and as follows:
a. PT = 500 mW (DO-7) at TL = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink
at L = .375 inch (9.53 mm). (Derate to 0 at +175°C).
b. PT = 500 mW (DO-213AB) at TEC = +125°C. (Derate to 0 at +175°C).
c. -65°C
Tj
+175°C; -65°C
TSTG
+175°C.
1.4 Primary electrical characteristics. Primary electrical ratings are as shown in maximum test ratings (see 3.10)
and as follows, (nominally .22 mA dc
IP
4.70 mA dc):
a. R
ΘJL
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7).
b. R
ΘJEC
= 100°C/W (maximum) junction to end-caps (DO-213AB).
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://www.dodssp.daps.mil.
AMSC N/A
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