ZOWIE
EGC10DH THRU EGC10MH
FEATURES
*
*
*
*
*
*
*
*
Halogen-free type
Lead free product, compliance to RoHS
GPRC (Glass passivated rectifier chip) inside
Glass passivated cavity-free junction
Lead less chip form, no lead damage
Low power loss , High efficiency
High current capability
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
High Efficient Rectifier
(200V~1000V / 1.0A)
OUTLINE DIMENSIONS
Case : 2010
4.5 ± 0.1
2.20 ± 0.1
Unit : mm
0.05
0
0.5
0.95 ± 0.2
0.95 ± 0.2
* General purpose rectification
* Surge absorption
JEDEC : SMA
DO-214AC
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Cathode Band, Laser marking
Weight :
0.02 gram
MARKING
Cathode mark
Series code
+ 0.2
0.96
- 0.1
APPLICATION
EGC
10D
.
Amps class
Halogen-free type
Voltage class
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
4 reels per box
*
6 boxes per carton
Voltage class: D = 200V, G = 400V
J = 600V, K = 800V, M = 1000V
Absolute Maximum Ratings (Ta = 25 C)
EGC10
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Reverse recovery time
Operating storage temperature Range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
rr
T
j,
T
STG
Conditions
DH
200
GH
400
JH
600
1.0
KH
800
MH
1000
Unit
V
A
8.3ms single half sine-wave
I
F =
0.5A, I
R =
1.0A, I
rr =
0.25A
30
50
-65 to +175
25
75
A
nS
o
C
ITEM
Symbol
Conditions
Type
EGC10DH
EGC10GH
EGC10JH
EGC10KH
EGC10MH
Min.
-
-
-
-
-
-
-
-
-
Typ.
0.95
1.05
1.45
1.45
1.45
0.10
9
65
14
Max.
1.00
1.25
1.70
1.70
1.70
5
-
-
-
Unit
Forward voltage
V
F
I
F
= 1.0A
V
Repetitive peak reverse current
Junction capacitance
Thermal resistance
I
RRM
C
j
R
th(JA)
R
th(JL)
V
R
= Max. V
RRM
, Ta = 25
o
C
V
R
= 4V, f = 1.0 MHz
Junction to ambient (NOTE)
Junction to lead (NOTE)
uA
pF
o
C/W
NOTES : Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
REV. 0
2009/10
ZOWIE
EGC10DH THUR EGC10MH
(200V~1000V / 1.0 A)
FIG.1 - TYPICAL FORWARD CURRENT DERATING CURVE
1.0
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
RESISTIVE OR
INDUCTIVE LOAD
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
30
25
8.3ms SINGLE HALF SINE-WAVE
20
15
EGC10JH ~ EGC10MH
EGC10DH & EGC10GH
0.5
10
5
0
0
25
50
75
100
125
o
0
150
175
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
10.00
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
T
J
=150 C
o
10.0
T
J
=125 C
o
1.00
1.0
0.10
0.10
T
J
=25 C
o
T
J
=25 C
o
EGC10DH
EGC10GH
EGC10JH~EGC10MH
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
JUNCTION CAPACITANCE, pF
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
T
J
= 25 C
o
REV. 0
2009/10
Microchip MCU
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