BPW21R
Vishay Telefunken
Silicon PN Photodiode
Description
BPW21R is a planar Silicon PN photodiode in a
hermetically sealed short TO–5 case, especially de-
signed for high precision linear applications.
Due to its extremely high dark resistance, the short
circuit photocurrent is linear over seven decades of il-
lumination level.
On the other hand, there is a strictly logarithmic
correlation between open circuit voltage and illumina-
tion over the same range.
The device is equipped with a flat glass window with
built in color correction filter, giving an approximation
to the spectral response of the human eye.
94 8394
Features
D
Hermetically sealed TO–5 case
D
Flat glass window with built–in color correction fil-
ter for visible radiation
D
D
D
D
D
D
D
D
D
Cathode connected to case
Wide viewing angle
ϕ
=
±
50
°
Large radiant sensitive area (A=7.5 mm
2
)
Suitable for visible radiation
High sensitivity
Low dark current
High shunt resistance
Excellent linearity
For photodiode and photovoltaic cell operation
Applications
Sensor in exposure and color measuring purposes
Document Number 81519
Rev. 2, 20-May-99
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BPW21R
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
T
amb
Symbol
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
10
300
125
–55...+125
–55...+125
260
250
Unit
V
mW
°
C
°
C
°
C
°
C
K/W
x
50
°
C
t
x
5s
Basic Characteristics
T
amb
= 25
_
C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Test Conditions
I
F
= 50 mA
I
R
= 20
m
A, E = 0
V
R
= 5 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
V
R
= 10 mV
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx, V
R
= 5 V
V
R
= 5 V, E
A
= 10
–2
...10
5
lx
Symbol
V
F
V
(BR)
I
ro
C
D
C
D
R
D
V
o
TK
Vo
I
k
TK
lk
I
ra
S
ϕ
Min
10
2
1.2
400
38
450
–2
9
–0.05
9
9
±50
565
420...675
3.1
3.0
30
Typ
1.0
Max
1.3
Unit
V
V
nA
nF
pF
G
W
mV
mV/K
m
A
%/K
m
A
nA/lx
deg
nm
nm
m
s
Dark Resistance
Open Circuit Voltage
Temp. Coefficient of V
o
Short Circuit Current
Temp. Coefficient of I
k
Reverse Light Current
Sensitivity
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time
V
R
= 0 V, R
L
= 1k
W
,
l
= 660 nm
Fall Time
V
R
= 0 V, R
L
= 1k
W
,
l
= 660 nm
280
4.5
4.5
l
p
l
0.5
t
r
t
f
m
s
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Document Number 81519
Rev. 2, 20-May-99
BPW21R
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
10
4
I
ro
– Reverse Dark Current ( nA )
C
D
– Diode Capacitance ( pF )
1400
1200
1000
800
600
400
200
0
20
94 8468
10
3
E=0
f=1MHz
10
2
V
R
=5V
10
1
10
0
40
60
80
100
120
94 8473
0.1
1
10
100
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 1. Reverse Dark Current vs. Ambient Temperature
I
ra rel
– Relative Reverse Light Current
1.3
1.2
Figure 4. Diode Capacitance vs. Reverse Voltage
S (
l
)
rel
– Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0
350
1.1
1.0
0.9
0.8
0
20
40
60
80
100
120
V
l
Eye
450
550
650
750
94 8738
T
amb
– Ambient Temperature (
°C
)
94 8477
l
– Wavelength ( nm )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
10
2
I
k
– Short Circuit Current (
m
A )
Figure 5. Relative Spectral Sensitivity vs. Wavelength
0°
10
°
20
°
30°
S
rel
– Relative Sensitivity
10
1
10
0
10
–1
10
–2
10
–3
10
–4
10
–2
10
–1
10
0
10
1
10
2
10
3
10
4
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8476
E
A
– Illuminance ( lx )
94 8475
Figure 3. Short Circuit Current vs. Illuminance
Figure 6. Relative Radiant Sensitivity vs.
Angular Displacement
Document Number 81519
Rev. 2, 20-May-99
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BPW21R
Vishay Telefunken
Dimensions in mm
96 12181
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Document Number 81519
Rev. 2, 20-May-99
BPW21R
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81519
Rev. 2, 20-May-99
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