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BFW92A

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size62KB,7 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BFW92A Overview

Transistor,

BFW92A Parametric

Parameter NameAttribute value
MakerVishay Telefunken (Vishay)
Reach Compliance Codeunknown
Maximum collector current (IC)0.035 A
ConfigurationSingle
Minimum DC current gain (hFE)20
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.18 W
surface mountYES
Base Number Matches1
BFW92A
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Wide band RF amplifier up to GHz range.
Features
D
High power gain
D
Low noise figure
3
2
94 9308
13623
1
BFW92A Marking: BFW92A
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
25
15
2.5
25
300
150
–55 to +150
Unit
V
V
V
mA
mW
°
C
°
C
T
amb
60
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Value
300
Unit
K/W
Document Number 85041
Rev. 3, 20-Jan-99
www.vishay.com
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