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BAS20HT1

Description
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size62KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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BAS20HT1 Overview

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon,

BAS20HT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instructionR-PDSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G2
Maximum non-repetitive peak forward current0.625 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage250 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
High Voltage
Switching Diode
1
BAS20HT1
Device Marking: JS
1
CATHODE
2
ANODE
2
CASE 477, STYLE 1
SOD– 323
MARKING DIAGRAM
ORDERING INFORMATION
Device
BAS20HT1
Package
SOD–323
Shipping
3000/Tape & Reel
JS= Specific Device Code
M = Date Code
JS M
Preferred:
devices are recommended choices for future use and best overall value.
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
250
200
625
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
Symbol
P
D
Max
200
1.57
635
–55 to+150
Unit
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
I
R
V
(BR)
V
F
1000
1250
5.0
50
250
1.0
100
Vdc
mV
Min
Max
Unit
µAdc
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 200 Vdc)
(V
R
= 200 Vdc, T
J
= 150°C)
Reverse Breakdown Voltage
(I
BR
= 100
µAdc)
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
(I
F
= I
R
= 30 mAdc, R
L
= 100
Ω)
C
D
t
rr
pF
ns
BAS20HT1–1/2
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