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BAV74LT1

Description
Rectifier Diode, 2 Element, 0.2A, 50V V(RRM), Silicon, TO-236AB
CategoryDiscrete semiconductor    diode   
File Size72KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BAV74LT1 Overview

Rectifier Diode, 2 Element, 0.2A, 50V V(RRM), Silicon, TO-236AB

BAV74LT1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Maximum non-repetitive peak forward current0.5 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.225 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAV74LT1/D
Monolithic Dual
Switching Diode
ANODE
1
3
CATHODE
2
ANODE
BAV74LT1
3
1
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
50
200
500
Unit
Vdc
mAdc
mAdc
2
CASE 318 – 08, STYLE 9
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
BAV74LT1 = JA
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 5.0
µAdc)
Reverse Voltage Leakage Current
(VR = 50 Vdc, TJ = 125°C)
(VR = 50 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100
Ω)
1. FR– 5 = 1.0
0.75
2. Alumina = 0.4
0.3
V(BR)
IR
CD
VF
trr
100
0.1
2.0
1.0
4.0
pF
Vdc
ns
50
Vdc
µAdc


0.062 in.
 
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
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