MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC856AWT1/D
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
COLLECTOR
3
BC856AWT1,BWT1
BC857AWT1,BWT1
BC858AWT1,BWT1,
CWT1
Motorola Preferred Devices
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R
q
JA
TJ, Tstg
Max
150
833
– 55 to +150
Unit
mW
°C/W
°C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA)
Collector – Emitter Breakdown Voltage
(IC = –10
µA,
VEB = 0)
Collector – Base Breakdown Voltage
(IC = –10
m
A)
Emitter – Base Breakdown Voltage
(IE = –1.0
m
A)
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
V(BR)CEO
–65
–45
–30
–80
–50
–30
–80
–50
–30
–5.0
–5.0
–5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–15
–4.0
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current
(VCB = –30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
ICBO
nA
µA
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10
µA,
VCE = –5.0 V)
BC856A, BC857A, BC585A
BC856A, BC857A, BC858A
BC858C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
VCE(sat)
—
—
VBE(sat)
—
—
VBE(on)
–0.6
—
—
—
–0.75
–0.82
–0.7
–0.9
—
—
V
—
—
–0.3
–0.65
V
hFE
—
—
—
125
220
420
90
150
270
180
290
520
—
—
—
250
475
800
V
—
(IC = –2.0 mA, VCE = –5.0 V)
Collector – Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base – Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base – Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
fT
Cob
NF
100
—
—
—
—
—
—
4.5
10
MHz
pF
dB
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
BC857/BC858
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
VCE = –10 V
TA = 25°C
V, VOLTAGE (VOLTS)
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
VCE(sat) @ IC/IB = 10
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–50
–100
VBE(on) @ VCE = –10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
0.3
0.2
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50
IC, COLLECTOR CURRENT (mAdc)
–100 –200
0
–0.1 –0.2
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
–2.0
VCE , COLLECTOR–EMITTER VOLTAGE (V)
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
TA = 25°C
–1.6
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
–1.2
IC =
–10 mA
IC = –50 mA
IC = –20 mA
IC = –200 mA
IC = –100 mA
–0.8
–0.4
0
–0.02
–0.1
–1.0
IB, BASE CURRENT (mA)
–10 –20
–0.2
–10
–1.0
IC, COLLECTOR CURRENT (mA)
–100
Figure 3. Collector Saturation Region
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
Figure 4. Base–Emitter Temperature Coefficient
10
7.0
C, CAPACITANCE (pF)
5.0
Cob
Cib
TA = 25°C
400
300
200
150
100
80
60
40
30
20
–0.5
VCE = –10 V
TA = 25°C
3.0
2.0
1.0
–0.4 –0.6
–1.0
–2.0
–4.0 –6.0
–10
–20 –30 –40
–1.0
–2.0 –3.0
–5.0
–10
–20
–30
–50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
BC856
–1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = –5.0 V
TA = 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
TJ = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.6
VBE @ VCE = –5.0 V
–0.4
–0.2
0.2
0
–0.2
VCE(sat) @ IC/IB = 10
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP)
–0.5
–50 –100 –200
–5.0 –10 –20
–1.0 –2.0
IC, COLLECTOR CURRENT (mA)
–0.1 –0.2
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
–2.0
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
–1.0
–1.6
IC =
–10 mA
–20 mA
–50 mA
–100 mA –200 mA
–1.4
–1.2
–1.8
θ
VB for VBE
–55°C to 125°C
–0.8
–2.2
–0.4
TJ = 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
IB, BASE CURRENT (mA)
–5.0
–10
–20
–2.6
–3.0
–0.2
–0.5 –1.0
–50
–2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–100 –200
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
40
TJ = 25°C
C, CAPACITANCE (pF)
20
Cib
500
VCE = –5.0 V
200
100
50
10
8.0
6.0
4.0
2.0
–0.1 –0.2
Cob
20
–0.5 –1.0 –2.0
–5.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
–50 –100
–100
–1.0
–10
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.05
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Z
θJC
(t) = r(t) R
θJC
R
θJC
= 83.3°C/W MAX
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC
(t)
500
1.0 k
2.0 k
5.0 k
10 k
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
Figure 13. Thermal Response
–200
1s
IC, COLLECTOR CURRENT (mA)
–100
–50
TA = 25°C
TJ = 25°C
3 ms
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon T J(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk)
≤
150°C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by the secondary breakdown.
–10
–5.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–5.0
–10
–30 –45 –65 –100
VCE, COLLECTOR–EMITTER VOLTAGE (V)
–2.0
–1.0
Figure 14. Active Region Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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