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BC847BWT1

Description
Small Signal Bipolar Transistor, 0.1A I(C), NPN,
CategoryDiscrete semiconductor    The transistor   
File Size179KB,4 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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BC847BWT1 Overview

Small Signal Bipolar Transistor, 0.1A I(C), NPN,

BC847BWT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
Nominal transition frequency (fT)100 MHz
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
3
COLLECTOR
BC846AWT1,BWT1
BC847AWT1,BWT1
CWT1
BC848AWT1,BWT1
CWT1
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
2
EMITTER
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
1
2
CASE 419–02, STYLE 3
SOT–323 /SC–70
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
Symbol
P
D
R
θJA
P
D
T
J
, T
stg
Max
150
833
2.4
–55 to +150
Unit
mW
°C/W
mW/°C
°C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= 10
µA,
V
EB
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= 1.0
µA)
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series,
BC848 Series
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
15
5.0
v
V
(BR)CES
v
V
(BR)CBO
v
V
(BR)EBO
I
CBO
v
nA
µA
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
K4–1/4

BC847BWT1 Related Products

BC847BWT1 BC846BWT1 BC847AWT1 BC848BWT1 BC847CWT1 BC848CWT1
Description Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN,
Maker LRC LRC LRC LRC LRC LRC
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single Single Single
Minimum DC current gain (hFE) 200 200 110 200 420 420
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W
surface mount YES YES YES YES YES YES
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Base Number Matches 1 1 1 1 1 1
Is it Rohs certified? conform to - conform to conform to conform to conform to
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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