DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BA277
Band-switching diode
Product specification
1998 May 06
Philips Semiconductors
Product specification
Band-switching diode
FEATURES
•
Small plastic SMD package
•
Continuous reverse voltage: max. 35 V
•
Continuous forward current: max. 100 mA
•
Low diode capacitance: max. 1.2 pF
•
Low diode forward resistance: max. 0.7
Ω.
APPLICATIONS
•
Low loss band switching in VHF television tuners.
•
Surface mount band-switching circuits.
DESCRIPTION
Planar high performance band-switching diode in a small
plastic SOD523 (SC-79) SMD package.
PINNING
BA277
handbook, halfpage
Marking code:
1.
1
2
1
Top view
PIN
DESCRIPTION
cathode
anode
2
MAM399
Fig.1
Simplified outline (SOD523; SC-79)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C
CONDITIONS
MIN.
−
−
−
−65
−65
MAX.
35
100
715
+150
+150
V
mA
mW
°C
°C
UNIT
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
r
D
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
PARAMETER
forward voltage
reverse current
diode capacitance
diode forward resistance
I
F
= 10 mA
V
R
= 25 V
V
R
= 20 V; T
amb
= 75
°C
f = 1 MHz; V
R
= 6 V; note 1; see Fig.2
I
F
= 2 mA; f = 100 MHz; note 1; see Fig.3
CONDITIONS
MAX.
1
50
1
1.2
0.7
V
nA
µA
pF
Ω
UNIT
1998 May 06
2
Philips Semiconductors
Product specification
Band-switching diode
GRAPHICAL DATA
BA277
handbook, halfpage
10
MGL433
handbook, halfpage
2.5
MGL432
Cd
(pF)
rD
(Ω)
2.0
1.5
1
1.0
0.5
10
−1
1
10
VR (V)
10
2
0
10
−1
1
IF (mA)
10
f = 1 MHz; T
j
= 25
°C.
f = 100 MHz; T
j
= 25
°C.
Fig.2
Diode capacitance as a function of reverse
voltage; typical values.
Fig.3
Diode forward resistance as a function of
forward current; typical values.
1998 May 06
3
Philips Semiconductors
Product specification
Band-switching diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
BA277
SOD523
A
c
HE
v
M
A
D
A
0
0.5
scale
1 mm
1
E
bp
2
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.7
0.5
bp
0.35
0.25
c
0.2
0.1
D
1.3
1.1
E
0.9
0.7
HE
1.7
1.5
v
0.15
(1)
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
EIAJ
SC-79
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
1998 May 06
4
Philips Semiconductors
Product specification
Band-switching diode
NOTES
BA277
1998 May 06
5
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