LESHAN RADIO COMPANY, LTD.
General purpose PIN diode
BAP50 – 02
FEATURES
· Low diode capacitance
· Low diode forward resistance.
APPLICATIONS
· General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 small SMD plastic package.
2
1
SOD523 SC-79
1
CATHODE
2
ANODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
MIN.
–
–
–
-65
-65
MAX.
50
50
715
+150
+150
UNIT
V
mA
mW
°C
°C
T
s
=90°C
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified.
SYMBOL
V
F
V
R
I
R
C
d
PARAMETER
forward voltage
reverse voltage
reverse current
diode capacitance
CONDITIONS
I
F
=50 mA
I
R
=10µA
V
R
=50 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 5 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
MIN
–
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
TYP.
0.95
–
–
0.4
0.3
0.22
25
14
3
20.4
17.3
15.5
1.74
1.79
1.88
1.03
1.09
1.15
0.26
0.32
0.34
MAX.
1.1
–
100
–
0.55
0.35
40
25
5
–
–
–
–
–
–
–
–
–
–
–
–
UNIT
V
V
nA
pF
pF
pF
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
|s
21
|
2
isolation
|s
21
|
2
insertion loss
S23–1/2
LESHAN RADIO COMPANY, LTD.
BAP50-02
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified. (Continue)
SYMBOL
τ
L
PARAMETER
charge carrier life time
CONDITIONS
when switched from I
F
=10 mA to
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
=3 mA
I
F
= 100 mA; f = 100 MHz
MIN
–
TYP.
1.05
MAX.
–
UNIT
µs
L
S
series inductance
–
0.6
–
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
10
3
f = 100 MHz; T
j
=25°C
PARAMETER
thermal resistance from junction to soldering-point
600
VALUE
85
UNIT
K/W
10
2
400
10
C
d
(pF)
200
r
D
(
Ω)
1
10
-1
1
10
10
2
0
0
f = 1 MHz; T
j
=25°C
4
8
12
16
20
I
F
(mA )
V
R
(V)
Fig.1 Forward resistance as a function of
forward current; typical values.
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
0
0
I
F
=10 mA.
-1
-5
|s
21
|
2
(dB)
I
F
= 1 mA.
|s
21
|
2
(dB)
-2
I
F
= 0.5 mA.
-10
-3
-15
-4
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
-20
Diode zero biased and inserted in
series with a 50
Ω
stripline circuit.
Tamb =25°C.
-5
0.5
1
1.5
2
2.5
3
-25
0.5
1
1.5
2
2.5
3
f (GHz )
f (GHz )
Fig.3 Insertion loss ( |s
21
| )of the diode in on-state
as a function of frequency; typical values.
2
Fig.4 Isolation ( |s
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
S23–2/2
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