LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP
BCX17LT1
BCX18LT1
NPN
BCX19LT1
BCX20LT1
Voltage and current are negative
for PNP transistors
3
COLLECTOR
3
COLLECTOR
1
BASE
1
BASE
2
EMITTER
2
EMITTER
3
MAXIMUM RATINGS
Value
Rating
Symbol
BCX17LT1
BCX19LT1
45
50
5.0
500
BCX18LT1
BCX20LT1
25
30
5.0
500
Unit
1
2
CASE 318–08, STYLE 6
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V
V
V
CEO
CBO
EBO
Vdc
Vdc
Vdc
mAdc
SOT–23 (TO–236AB)
I
C
DEVICE MARKING
BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
M15–1/2
LESHAN RADIO COMPANY, LTD.
PNP BCX17LT1 BCX18LT1
NPN BCX19LT1 BCX20LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
BCX17, 19
BCX18, 20
Collector–Emitter Breakdown Voltage
(I
C
= 10
µAdc,
I
C
= 0)
BCX17, 19
BCX18, 20
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
(V
CB
= 20 Vdc, I
E
= 0, T
A
= 150°C )
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
V
(BR)CEO
45
25
V
(BR)CES
50
30
I
CBO
—
—
I
EBO
—
—
—
—
100
5.0
10
nAdc
µAdc
µAdc
—
—
—
—
—
—
—
—
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
( I
C
= 100 mAdc, V
CE
= 1.0 Vdc )
( I
C
= 300 mAdc, V
CE
= 1.0 Vdc )
( I
C
= 500 mAdc, V
CE
= 1.0 Vdc )
Collector–Emitter Saturation Voltage
( I
C
= 500mAdc, I
B
= 50mAdc )
Base–Emitter On Voltage
( I
C
= 500 mAdc, V
CE
= 1.0 Vdc )
V
CE(sat)
h
FE
100
70
40
—
—
—
—
—
600
—
—
0.62
Vdc
—
V
BE(on)
—
—
1.2
Vdc
M15–2/2