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BCX17LT1

Description
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size87KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

BCX17LT1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
VCEsat-Max0.62 V
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCX17LT1/D
General Purpose
Transistors
COLLECTOR 3
1
BASE
2 EMITTER
COLLECTOR 3
1
BASE
2 EMITTER
PNP
BCX17LT1
BCX18LT1
NPN
BCX19LT1
BCX20LT1
Voltage and current are negative
for PNP transistors
3
MAXIMUM RATINGS
Value
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
BCX17LT1
BCX19LT1
45
50
5.0
500
BCX18LT1
BCX20LT1
25
30
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
DEVICE MARKING
BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Symbol
PD
Max
225
1.8
R
θJA
PD
556
300
2.4
R
θJA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1

BCX17LT1 Related Products

BCX17LT1 BCX17LT1/D BCX18LT1 BCX19LT1 BCX20LT1
Description Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB general purpose transistors Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Maker Motorola ( NXP ) - Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown - unknown unknown unknown
ECCN code EAR99 - EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A - 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 45 V - 25 V 45 V 25 V
Configuration SINGLE - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 - 40 40 40
JEDEC-95 code TO-236AB - TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 - e0 e0 e0
Number of components 1 - 1 1 1
Number of terminals 3 - 3 3 3
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP - PNP NPN NPN
Maximum power consumption environment 0.225 W - 0.225 W 0.225 W 0.225 W
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount YES - YES YES YES
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING - GULL WING GULL WING GULL WING
Terminal location DUAL - DUAL DUAL DUAL
Transistor component materials SILICON - SILICON SILICON SILICON
VCEsat-Max 0.62 V - 0.62 V 0.62 V 0.62 V
Base Number Matches 1 - 1 1 1

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