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LBCX20LT1G

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size244KB,6 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

LBCX20LT1G Overview

Transistor,

LBCX20LT1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
Pb-Free Package is available.
PNP
LBCX17LT1G
LBCX18LT1G
NPN
LBCX19LT1G
LBCX20LT1G
Voltage and current are negative
for PNP transistors
ORDERING INFORMATION
Device
LBCX17LT1G
LBCX17LT3G
LBCX18LT1G
LBCX18LT3G
LBCX19LT1G
LBCX19LT3G
LBCX20LT1G
LBCX20LT3G
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
1
3
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
BASE
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
3
COLLECTOR
MAXIMUM RATINGS
Value
Rating
Symbol
LBCX17LT1G
LBCX19LT1G
45
50
5.0
500
LBCX18LT1G
LBCX20LT1G
25
30
5.0
500
Unit
2
EMITTER
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V
V
V
CEO
CBO
EBO
Vdc
Vdc
Vdc
mAdc
1
BASE
3
COLLECTOR
I
C
DEVICE MARKING
LBCX17LT1G= T1; LBCX18LT1G = T2; LBCX19LT1G = U1; LBCX20LT1G = U2
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
LBCX17/18/19/20LT1-1/3

LBCX20LT1G Related Products

LBCX20LT1G LBCX18LT1G LBCX19LT3G LBCX20LT3G
Description Transistor, Transistor, Transistor, Transistor,
Is it Rohs certified? conform to conform to conform to conform to
Maker LRC LRC LRC LRC
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 100 100 100 100
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN PNP NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W
surface mount YES YES YES YES

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