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LBC848CWT1

Description
Small Signal Bipolar Transistor, 0.1A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size150KB,5 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

LBC848CWT1 Overview

Small Signal Bipolar Transistor, 0.1A I(C), NPN

LBC848CWT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)420
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)100 MHz
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
Pb– Free Package May be Available. The G.Suffix Denotes a
Pb– Free Lead Finish
ORDERING INFORMATION
( Pb– Free )
Device
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G,CWT1G
LBC848AWT1G,BWT1G,CWT1G
Package
SOT-323
SOT-323
SOT-323
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
LBC846AWT1,BWT1
LBC847AWT1,BWT1
CWT1
LBC848AWT1,BWT1
CWT1
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
1
2
SOT–323 /SC–70
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
Symbol
P
D
R
θJA
P
D
T
J
, T
stg
Max
150
833
2.4
–55 to +150
Unit
mW
°C/W
mW/°C
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC846AWT1 = 1A; LBC846BWT1 = 1B; LBC847AWT1 = 1E; LBC847BWT1 = 1F;
LBC847CWT1 = 1G; LBC848AWT1 = 1J; LBC848BWT1 = 1K; LBC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= 10
µA,
V
EB
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= 1.0
µA)
LBC846 Series
LBC847 Series
LBC848 Series
LBC846 Series
LBC847 Series
LBC848 Series
LBC846 Series
LBC847 Series
LBC848 Series
LBC846 Series
LBC847 Series
LBC848 Series
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
15
5.0
v
V
(BR)CES
v
V
(BR)CBO
v
V
(BR)EBO
I
CBO
v
nA
µA
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
K5–1/5

LBC848CWT1 Related Products

LBC848CWT1 LBC848BWT1 LBC847CWT1
Description Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN
Is it Rohs certified? incompatible incompatible incompatible
Maker LRC LRC LRC
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Configuration Single Single Single
Minimum DC current gain (hFE) 420 200 420
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
Base Number Matches 1 1 1
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