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BC858CWT1

Description
Small Signal Bipolar Transistor, 0.1A I(C), PNP
CategoryDiscrete semiconductor    The transistor   
File Size210KB,5 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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BC858CWT1 Overview

Small Signal Bipolar Transistor, 0.1A I(C), PNP

BC858CWT1 Parametric

Parameter NameAttribute value
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)420
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
surface mountYES
Nominal transition frequency (fT)100 MHz
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
3
COLLECTOR
1
BASE
BC856AWT1, BWT1
BC857AWT1, BWT1
BC858AWT1, BWT1
CWT1
3
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
1
2
CASE 419–02, STYLE 3
SOT– 323 / SC-70
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
θJA
T
J
, T
stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= –10
µA,
V
EB
= 0)
BC856 Series
BC857 Series
BC858 Series
BC856 Series
V
(BR)CEO
– 65
– 45
– 30
– 80
– 50
– 30
– 80
– 50
– 30
– 5.0
– 5.0
– 5.0
– 15
– 4.0
v
BC857 Series
BC858 Series
Collector–Base Breakdown Voltage BC856 Series
(I
C
= – 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= – 1.0
µA)
BC857 Series
BC858 Series
BC856 Series
V
(BR)CES
v
V
(BR)CBO
v
BC857 Series,
BC858 Series
Collector Cutoff Current (V
CB
= – 30 V)
(V
CB
= – 30 V, T
A
= 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
V
(BR)EBO
v
nA
µA
I
CBO
K5–1/5

BC858CWT1 Related Products

BC858CWT1 BC856BWT1 BC857AWT1 BC857BWT1 BC858BWT1
Description Small Signal Bipolar Transistor, 0.1A I(C), PNP Small Signal Bipolar Transistor, 0.1A I(C), PNP, Small Signal Bipolar Transistor, 0.1A I(C), PNP Small Signal Bipolar Transistor, 0.1A I(C), PNP, Small Signal Bipolar Transistor, 0.1A I(C), PNP,
Maker LRC LRC LRC LRC LRC
Reach Compliance Code unknown unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single Single
Minimum DC current gain (hFE) 420 220 125 220 220
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W
surface mount YES YES YES YES YES
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Base Number Matches 1 1 1 1 1
Is it Rohs certified? - conform to - conform to conform to
Peak Reflow Temperature (Celsius) - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
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