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D1709N20T

Description
Rectifier Diode, 1 Phase, 1 Element, 1700A, 2000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size255KB,23 Pages
ManufacturerEUPEC [eupec GmbH]
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D1709N20T Overview

Rectifier Diode, 1 Phase, 1 Element, 1700A, 2000V V(RRM), Silicon,

D1709N20T Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.82 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current18000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature180 °C
Maximum output current1700 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2000 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1
Technische Information / Technical Information
Netz Gleichrichterdiode
Rectifier Diode
D 1709 N 20...24
T
vj
= - 40°C...T
vj max
V
RRM
N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak forward reverse voltage
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMS forward current
Dauergrenzstrom
mean forward current
Stoßstrom-Grenzwert
surge foward current
Grenzlastintegral
I²t-value
T
C
= 90 °C
T
vj
= 25°C, tp = 10 ms
T
vj
= T
vj max
, tp = 10 ms
T
vj
= 25°C, tp = 10ms
T
vj
= T
vj max
, tp = 10ms
2000
2200
2400
2300
2500
2700
1700
21.500
18.000
2.311
1.620
V
V
V
T
vj
= + 25°C...T
vj max
V
RSM
2100
V
V
V
A
A
A
A
A²s*10
3
A²s*10
3
I
FRMSM
I
FAVM
I
FSM
I²t
Charakteristische Werte / Characteristic values
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
forward slope resistance
T
vj
= T
vj max
,
T
vj
= T
vj max
,
T
vj
= T
vj max
T
vj
= T
vj max
i
F
=
i
F
=
4 kA
700 A
v
F
v
F
V
(TO)
r
T
max.
max.
1,8
0,98
0,83
0,20
V
V
V
mΩ
T
vj
= T
vj max
Durchlaßkennlinie
on-state voltage
A=
B=
C=
D=
T
vj
= 25 °C
6,4014E-01
1,2359E-04
-1,0606E-02
1,2090E-02
i
R
7,2964E-01
8,9772E-06
5,9894E-03
8,4835E-03
max.
60
mA
v
T
=
A
+
B
i
T
+
C
Ln
(
i
T
+
1)
+
D
i
T
Sperrstrom
reverse current
T
vj
= T
vj max
, v
R
= V
RRM
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resitance, junction to case
Kühlfläche / cooling surface
R
thJC
beidseitig / two-sided,Θ =180°sin
beidseitig / two-sided, DC
Anode / anode,
Θ
=180°sin
Anode / anode, DC
Kathode / cathode,
Θ
=180°sin
Kathode / cathode, DC
Übergangs- Wärmewiderstand
thermal resitance, case to heatsink
Höchstzulässige Sperrschichttemperatur
max. junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single-sided
R
thJK
max.
max.
T
vj max
T
c op
T
stg
-40...+150
-40...+150
0,0035
0,0070
160
°C/W
°C/W
°C
°C
°C
max.
max.
max.
max.
max.
max.
0,0245
0,0223
0,0410
0,0388
0,0540
0,0514
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
prepared by: K.A.Rüther
approved by: J. Novotny
data of publication:
revision: 1
BIP AM
A20/00
Seite/page 1

D1709N20T Related Products

D1709N20T D1709N22T D1709N24T
Description Rectifier Diode, 1 Phase, 1 Element, 1700A, 2000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 1700A, 2200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 1700A, 2400V V(RRM), Silicon,
Reach Compliance Code unknown unknown unknown
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.82 V 1.82 V 1.82 V
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 18000 A 18000 A 18000 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 180 °C 180 °C 180 °C
Maximum output current 1700 A 1700 A 1700 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 2000 V 2200 V 2400 V
surface mount YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location END END END
Maker EUPEC [eupec GmbH] - EUPEC [eupec GmbH]
Base Number Matches 1 1 -
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