2N7336
IRFG6110
MECHANICAL DATA
Dimensions in mm (inches)
14 LEAD DUAL IN LINE QUAD
N & P CHANNEL
POWER MOSFETS
BV
DSS
8
19.507 ± 0.432
(0.768 ± 0.017)
2.134
(0.084)
0.457 ± 0.102
(0.018 ± 0.004)
±100V
N-CHANNEL
P-CHANNEL
9.525 ± 0.635
(0.375 ± 0.025)
6.426 ± 0.305
(0.253 ± 0.012)
14
ID
(cont)
RDS
(on)
FEATURES
1A
Ω
0.7Ω
-0.75A
Ω
1.4Ω
1
7
• AVALANCHE ENERGY RATED
1.422 ± 0.102
(0.056 ± 0.004)
2.54
(0.100)
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
• FOR AUTOMATIC INSERTION
N-CHANNEL P-CHANNEL N-CHANNEL P-CHANNEL
1—Drain 1
2—Source 1
3—Gate 1
5—Gate 2
6—Source 2
7—Drain 2
8—Drain 3
9—Source3
10—Gate 3
12—Gate 4
13—Source 4
14—Drain 4
• SIMPLE DRIVE REQUIREMENTS
• EASE OF PARALLELING
• 2 N-CHANNEL/2 P-CHANNEL
CO-PACKAGED HEXFETS
P-CHANNEL
±20V
-0.75A
-0.5A
-3A
1.4W
0.011W/°C
75mJ
-5.5V/ns
–55 to 150°C
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
N-CHANNEL
V
GS
I
D
I
D
I
DM
P
D
E
AS
dv/dt
T
J
, T
stg
R
θJC
R
θJCA
Gate – Source Voltage
Continuous Drain Current
(V
GS
= 10V , T
case
= 25°C)
Continuous Drain Current
(V
GS
= 10V , T
case
= 100°C)
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
±20V
1.A
0.6A
4A
1.4W
0.011W/°C
75mJ
5.5V/ns
–55 to 150°C
6.25°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width
≤
300µs,
δ ≤
2%
2) @ V
DD
= 25V , L
≥
112mH , R
G
= 25Ω , Peak I
L
= 1A , Starting T
J
= 25°C
3) @ I
SD
≤
1A , di/dt
≤
75A/µs , V
DD
≤
BV
DSS
, T
J
≤
150°C , Suggested R
G
= 24Ω
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
4/99
2N7336
IRFG6110
ELECTRICAL CHARACTERISTICS FOR N-CHANNEL
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
∆T
J
R
DS(on)
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Breakdown Voltage
Static Drain – Source On–State
Resistance
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
PACKAGE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
I
S
= 1.0A
V
GS
= 0
I
F
= 1A
T
J
= 25°C
Negligible
4.0
6.0
d
i
/ d
t
≤
100A/µs V
DD
≤
50V
T
J
= 25°C
V
DD
= 50V
I
D
= 1A
R
G
= 24Ω
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5V
DS
I
D
= 1A
180
82
15
15
7.5
7.5
20
25
40
40
1
4
1.5
200
0.83
ns
nC
pF
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
I
D
= 0.6A
I
D
= 1A
I
D
= 250µA
I
DS
= 0.60A
V
DS
= 0.8V
DSS
T
J
= 125°C
I
D
= 1mA
Min.
100
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
Reference to 25°C
0.13
0.70
0.80
2
0.86
25
250
100
–100
4
V / °C
Ω
V
S(Ω
µA
nA
)
Ω
(
4/99
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
SOURCE – DRAIN DIODE CHARACTERISTICS
A
V
ns
µC
nH
Notes
1) Pulse Test: Pulse Width
≤
300µs,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
2N7336
IRFG6110
ELECTRICAL CHARACTERISTICS FOR P-CHANNEL
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
∆T
J
R
DS(on)
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
PACKAGE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
I
S
= –0.75A
V
GS
= 0
I
F
= –0.75A
T
J
= 25°C
Negligible
4.0
6.0
d
i
/ d
t
≤
100A/µs V
DD
≤
–50V
T
J
= 25°C
V
DD
= –50V
I
D
= –0.75A
R
G
= 24Ω
V
GS
= 0
V
DS
= –25V
f = 1MHz
V
GS
= –10V
V
DS
= 0.5V
DS
I
D
= –0.75A
200
85
30
15
7
8
30
60
40
40
–0.75
–3
–5.5
200
90
ns
nC
pF
Test Conditions
V
GS
= 0
I
D
= –1mA
V
GS
= –10V
V
GS
= –10V
V
DS
= V
GS
V
DS
≥
–15V
V
GS
= 0
V
GS
= -20V
V
GS
= 20V
I
D
= –0.50A
I
D
= –0.75A
I
D
= –250µA
I
DS
= –0.50A
V
DS
= 0.8V
DSS
T
J
= 125°C
I
D
= –1mA
Min.
–100
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
Reference to 25°C
0.098
1.4
1.73
–2
0.67
–25
–250
–100
–100
–4
V / °C
Ω
V
S(Ω
µA
nA
)
Ω
(
4/99
V
GS(th)
Gate Threshold Voltage 1
g
fs
I
DSS
I
GSS
I
GSS
SOURCE – DRAIN DIODE CHARACTERISTICS
A
V
ns
µC
nH
Notes
1) Pulse Test: Pulse Width
≤
300µs,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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