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EDL6416CBBH-75-F

Description
64M bits Mobile RAM⑩
Categorystorage    storage   
File Size671KB,59 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
Download Datasheet Parametric Compare View All

EDL6416CBBH-75-F Overview

64M bits Mobile RAM⑩

EDL6416CBBH-75-F Parametric

Parameter NameAttribute value
MakerELPIDA
Objectid1611065169
Parts packaging codeBGA
package instructionVFBGA,
Contacts60
Reach Compliance Codeunknow
ECCN codeEAR99
compound_id9927642
access modeFOUR BANK PAGE BURST
Maximum access time8 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length6 mm
memory density67108864 bi
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals60
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Certification statusNot Qualified
Maximum seat height1 mm
self refreshYES
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
width5.5 mm
PRELIMINARY DATA SHEET
64M bits Mobile RAM
EDL6416CBBH (4M words
×
16 bits)
Specifications
Density: 64M bits
Organization: 1M words
×
16 bits
×
4 banks
Package: 60-ball FBGA
Lead-free (RoHS compliant) and Halogen-free
Power supply: VDD, VDDQ
=
1.7V to 1.95V
Clock frequency: 133MHz (max.)
1KB page size
Row address: A0 to A11
Column address: A0 to A7
Four internal banks for concurrent operation
Interface: LVCMOS
Burst lengths (BL): 1, 2, 4, 8, full page
Burst type (BT):
Sequential (1, 2, 4, 8, full page)
Interleave (1, 2, 4, 8)
/CAS Latency (CL): 3
Precharge: auto precharge option for each burst
access
Driver strength: normal/weak
Refresh: auto-refresh, self-refresh
Refresh cycles: 4096 cycles/64ms
Average refresh period: 15.6µs
Operating ambient temperature range
TA = –25°C to +85°C
Pin Configurations
/xxx indicates active low signal.
60-ball FBGA
1
2
3
4
5
6
7
8
9
10
A
VSS
DQ15
VSSQ
VDDQ
DQ0
VDD
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
NC
B
VDDQ
DQ13
DQ14
C
VSSQ
DQ11
DQ12
D
VDDQ
DQ9
DQ10
E
NC
NC
DQ8
F
VSS
UDQM
NC
NC
LDQM
VDD
G
CKE
CLK
NC
/WE
/CAS
/RAS
/CS
H
A9
A11
A7
A4
NC
A8
A5
BA0
BA1
A1
VDD
J
A6
A10/AP
A0
K
VSS
A2
A3
(Top view)
A0 to A11
BA0, BA1
DQ0 to DQ15
CLK
CKE
/CS
/RAS
/CAS
/WE
UDQM
LDQM
VDD
VSS
VDDQ
VSSQ
NC
Address inputs
Bank select
Data inputs/ outputs
Clock input
Clock enable
Chip select
Row address strobe
Column address strobe
Write enable
Upper DQ mask enable
Lower DQ mask enable
Power supply
Ground
Power supply for DQ
Ground for DQ
No connection
Features
Low power consumption
Single pulsed /RAS
Burst read/write operation capability
Byte control by DQM
Programmable Partial Array Self-Refresh
Auto Temperature Compensated Self-Refresh
(ATCSR) by built-in temperature sensor
Burst termination by burst stop command and
Precharge command
Document No. E1138E21 (Ver. 2.1)
Date Published August 2008 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2007-2008

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