|
BA1F4M |
BA1F4M-A |
| Description |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
| Maker |
NEC Electronics |
NEC Electronics |
| Reach Compliance Code |
unknown |
unknown |
| Other features |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Maximum collector current (IC) |
0.1 A |
0.1 A |
| Collector-emitter maximum voltage |
50 V |
50 V |
| Configuration |
SINGLE WITH BUILT-IN RESISTOR |
SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) |
90 |
90 |
| JESD-30 code |
R-PSIP-T3 |
R-PSIP-T3 |
| Number of components |
1 |
1 |
| Number of terminals |
3 |
3 |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
IN-LINE |
IN-LINE |
| Polarity/channel type |
NPN |
NPN |
| Certification status |
Not Qualified |
Not Qualified |
| surface mount |
NO |
NO |
| Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
| Terminal location |
SINGLE |
SINGLE |
| transistor applications |
SWITCHING |
SWITCHING |
| Transistor component materials |
SILICON |
SILICON |
| Maximum off time (toff) |
6000 ns |
6000 ns |
| Maximum opening time (tons) |
400 ns |
400 ns |
| Base Number Matches |
1 |
1 |