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BZT03D51-TR

Description
Zener Diode, 51V V(Z), 10%, 1.3W,
CategoryDiscrete semiconductor    diode   
File Size45KB,4 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
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BZT03D51-TR Overview

Zener Diode, 51V V(Z), 10%, 1.3W,

BZT03D51-TR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay Telefunken (Vishay)
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance60 Ω
JESD-609 codee0
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation1.3 W
Nominal reference voltage51 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage tolerance10%
Base Number Matches1
BZT03D...
Vishay Telefunken
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Clamping time in picoseconds
Applications
Medium power voltage regulators and medium power
transient suppression circuits
94 9539
Order Instruction
Type
BZT03D6V2
Ordering Code
BZT03D6V2–TAP
BZT03D6V2–TR
Remarks
Ammopack
Tape and Reel
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Test Conditions
l=10 mm, T
L
=25
°
C
T
amb
=25
°
C
Type
Symbol
P
V
P
V
P
ZRM
P
ZSM
T
j
T
stg
Value
3.25
1.3
10
600
175
–65...+175
Unit
W
W
W
W
°
C
°
C
Repetitive peak reverse power dissipation
Non repetitive peak surge power dissipation t
p
=100
m
s, T
j
=25
°
C
Junction temperature
Storage temperature range
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=10 mm, T
L
=constant
on PC board with spacing 25 mm
Symbol
R
thJA
R
thJA
Value
46
100
Unit
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=0.5A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
Document Number 85600
Rev. 3, 12-Mar-01
www.vishay.com
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