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IRFN250-JQR-BR4

Description
22A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size22KB,2 Pages
ManufacturerSEMELAB
Environmental Compliance
Download Datasheet Parametric View All

IRFN250-JQR-BR4 Overview

22A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET

IRFN250-JQR-BR4 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMELAB
package instructionUNCASED CHIP, R-XUUC-N3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.105 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N3
JESD-609 codee4
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)88 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRFN250
2N7225U1
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
N–CHANNEL
POWER MOSFET
3 .6 0 (0 .1 4 2 )
M a x .
1
3
0 .7 6
(0 .0 3 0 )
m in .
V
DSS
I
D(cont)
R
DS(on)
FEATURES
200V
27.4A
0.100Ω
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
SMD 1 PACKAGE (TO-276AB)
Pad 1 – Source
Pad 2 – Drain
Pad 3 – Gate
Note:
IRF250SMD also available with
pins 1 and 3 reversed.
±20V
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
dv/dt
T
J
, T
stg
T
L
R
θJC
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
27.4A
17A
110A
150W
1.2W/°C
500mJ
5.0V/ns
–55 to 150°C
300°C
0.83°C/W
Notes
1) Pulse Test: Pulse Width
300ms,
δ ≤
2%
2) @ V
DD
= 25V , L
1.3mH , Peak I
L
= 27.4A , Starting T
J
= 25°C
3) @ I
SD
27.5A , di/dt
190A/µs , V
DD
BV
DSS
, T
J
150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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