LESHAN RADIO COMPANY, LTD.
Band-switching diode
FEATURES
· Small plastic SMD package
· Low diode capacitance
· Low diode forward resistance
· Small inductance.
APPLICATIONS
· Low loss band-switching in VHF television tuners
· Surface mount band-switching circuits.
DESCRIPTION
Planar, high performance band-switch diode in a small SMD plastic
package (SOD523).
2
1
BA 892
SOD523 SC-79
1
CATHODE
2
ANODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
=90°C
CONDITIONS
MIN.
–
–
–
-65
-65
MAX.
35
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified.
SYMBOL
PARAMETER
V
F
forward voltage
I
R
C
d
reverse current
diode capacitance
CONDITIONS
I
F
=10 mA
V
R
=30 V
f = 1 MHz; note 1;
V
R
= 1 V
V
R
= 3 V
r
D
diode forward resistance
f = 100 MHz; note 1;
I
F
= 3 mA
I
F
= 10 mA
L
S
MIN
–
–
–
0.6
–
–
–
TYP.
–
–
0.92
0.85
0.45
0.36
0.6
MAX.
1
20
1.4
1.1
0.7
0.5
-
UNIT
V
nA
pF
pF
Ω
Ω
nH
series inductance
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
S22–1/2
LESHAN RADIO COMPANY, LTD.
BA 892
2
10
1.6
C
d
(pF)
1.2
r
D
(
Ω)
1
f = 1 MHz; T
j
=25°C
0.8
0.4
0
0
10
20
30
10
-1
0.1
f = 100 MHz; T
j
=25°C
1
10
V
R
(V)
I
F
(mA )
Fig.1 Diode capacitance as a function of reverse
voltage; typical values.
Fig.2 Diode forward resistance as a function of
forward current; typical values.
S22–2/2
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