DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
BC807W
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jun 09
1999 May 18
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complement: BC817W.
MARKING
TYPE
NUMBER
BC807W
BC807-16W
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING
CODE
(1)
5D∗
5A∗
TYPE
NUMBER
BC807-25W
BC807-40W
MARKING
CODE
(1)
5B∗
5C∗
1
Top view
2
MAM048
BC807W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base; I
C
=
−10
mA
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−50
−45
−5
−500
−1
−200
200
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT
1999 May 18
2
Philips Semiconductors
Product specification
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC807W
BC807-16W
BC807-25W
BC807-40W
DC current gain
V
CEsat
V
BE
C
c
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
I
C
=
−500
mA; V
CE
=
−1
V; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
C
=
−500
mA; V
CE
=
−1
V; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
CONDITIONS
I
E
= 0; V
CB
=
−20
V
I
E
= 0; V
CB
=
−20
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−100
mA; V
CE
=
−1
V; note 1;
see Figs 2, 3 and 4
−
−
−
100
100
160
250
40
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
BC807W
UNIT
K/W
MAX.
−100
−5
−100
600
250
400
600
−
−700
−1.2
10
−
UNIT
nA
µA
nA
mV
V
pF
MHz
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 80
1999 May 18
3
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
handbook, full pagewidth
250
MBH717
hFE
200
VCE =
−1
V
150
100
50
0
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
BC807-16W.
Fig.2 DC current gain; typical values.
1999 May 18
4
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
handbook, full pagewidth
500
MBH718
hFE
400
VCE =
−1
V
300
200
100
0
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
BC807-25W.
Fig.3 DC current gain; typical values.
handbook, full pagewidth
500
MBH719
hFE
400
VCE =
−1
V
300
200
100
0
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
BC807-40W.
Fig.4 DC current gain; typical values.
1999 May 18
5
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