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BA679S: DescriptionPin Diode, 30V V(BR), Silicon, DO-213AA,; CategoryDiscrete semiconductor diode; File Size41KB，1 Pages; ManufacturerTEMIC; Websitehttp://www.temic.de/

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BA679S Overview

Pin Diode, 30V V(BR), Silicon, DO-213AA,

BA679S Parametric

Parameter Name	Attribute value
Maker	TEMIC
Reach Compliance Code	unknown
application	ATTENUATOR
Minimum breakdown voltage	30 V
Shell connection	ISOLATED
Configuration	SINGLE
Maximum diode capacitance	0.5 pF
Diode component materials	SILICON
Diode type	PIN DIODE
frequency band	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 code	DO-213AA
JESD-30 code	O-LELF-N2
Minority carrier nominal lifetime	4 µs
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Reverse test voltage	30 V
surface mount	YES
technology	POSITIVE-INTRINSIC-NEGATIVE
Terminal form	NO LEAD
Terminal location	END
Base Number Matches	1

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BA679S Related Products

	BA679S	BA479S	BA479G	BA679	BA779-2	BA979	BA979S
Description	Pin Diode, 30V V(BR), Silicon, DO-213AA,	Pin Diode, 30V V(BR), Silicon, DO-35,	Pin Diode, 30V V(BR), Silicon, DO-35,	Pin Diode, 30V V(BR), Silicon, DO-213AA,	Pin Diode, 30V V(BR), Silicon, TO-236,	Pin Diode, 30V V(BR), Silicon,	Pin Diode, 30V V(BR), Silicon,
Maker	TEMIC	TEMIC	TEMIC	TEMIC	TEMIC	TEMIC	TEMIC
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
application	ATTENUATOR	ATTENUATOR	ATTENUATOR	ATTENUATOR	ATTENUATOR	ATTENUATOR	ATTENUATOR
Minimum breakdown voltage	30 V	30 V	30 V	30 V	30 V	30 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SINGLE	SINGLE
Maximum diode capacitance	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE
frequency band	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	O-LELF-N2	O-LALF-W2	O-LALF-W2	O-LELF-N2	R-PDSO-G3	O-LELF-N2	O-LELF-N2
Minority carrier nominal lifetime	4 µs	4 µs	4 µs	4 µs	4 µs	4 µs	4 µs
Number of components	1	1	1	1	2	1	1
Number of terminals	2	2	2	2	3	2	2
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Package body material	GLASS	GLASS	GLASS	GLASS	PLASTIC/EPOXY	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	RECTANGULAR	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	SMALL OUTLINE	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Reverse test voltage	30 V	30 V	30 V	30 V	30 V	30 V	30 V
surface mount	YES	NO	NO	YES	YES	YES	YES
technology	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE
Terminal form	NO LEAD	WIRE	WIRE	NO LEAD	GULL WING	NO LEAD	NO LEAD
Terminal location	END	AXIAL	AXIAL	END	DUAL	END	END
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED
JEDEC-95 code	DO-213AA	DO-35	DO-35	DO-213AA	TO-236	-	-

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