NPN SILICON
SWITCHING TRANSISTOR
BUV18X
•
•
•
•
High Current, Fast Switching, Low VCE(sat).
Hermetic Metal TO3 Package.
Ideally suited for Motor Drive Control
and Power Switching Circuits
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Peak Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
120V
60V
7V
50A
90A
16A
40A
250W
1.43W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
0.7
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
S emelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9619
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
NPN SILICON
SWITCHING TRANSISTOR
BUV18X
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
V(BR)CEO
V(BR)EBO
ICEX
IEBO
(1)
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Test Conditions
IC = 10mA
IE = 1.0mA
VCE = 120V
VBE = -1.5V
TC = 100°C
VEB = 5V
IC = 20A
IC = 0
IB = 1A
IB = 4A
IB = 8A
IB = 8A
Min.
60
Typ
Max.
Units
V
7
1.0
3.0
1.0
1.0
0.6
1.5
2.2
V
mA
VCE(sat)
IC = 40A
IC = 80A
VBE(sat)
(1)
IC = 80A
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 2.0A
f = 5MHz
Turn-On Time
Storage Time
Fall Time
IC = 80A
IB1 = 8A
IC = 80A
IB1 = -IB2 = 8A
VCC = 60V
VCC = 60V
1.5
1.1
0.25
µs
VCE = 15V
8
MHz
ton
ts
tf
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9619
Issue 1
Page 2 of 3
NPN SILICON
SWITCHING TRANSISTOR
BUV18X
MECHANICAL DATA
Dimensions in mm (inches)
3 9 .9 5 (1 .5 7 3 )
m a x .
3 0 .4 0 (1 .1 9 7 )
3 0 .1 5 (1 .1 8 7 )
1 7 .1 5 (0 .6 7 5 )
1 6 .6 4 (0 .6 5 5 )
2 0 .3 2 (0 .8 0 0 )
1 8 .8 0 (0 .7 4 0 )
d ia .
1 1 .1 8 (0 .4 4 0 )
1 0 .6 7 (0 .4 2 0 )
1 .7 8 (0 .0 7 0 )
1 .5 2 (0 .0 6 0 )
1 .5 7 (0 .0 6 2 )
1 .4 7 (0 .0 5 8 )
d ia .
2 p lc s .
TO3 (TO-204AE)
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
1 2 .0 7 (0 .4 7 5 )
1 1 .3 0 (0 .4 4 5 )
7 .8 7 (0 .3 1 0 )
6 .9 9 (0 .2 7 5 )
2 6 .6 7 (1 .0 5 0 )
m a x .
4 .0 9 (0 .1 6 1 )
3 .8 4 (0 .1 5 1 )
d ia .
2 p lc s .
Website:
http://www.semelab-tt.com
Document Number 9619
Issue 1
Page 3 of 3
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