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BUV18X

Description
Power Bipolar Transistor, 90A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size183KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric Compare View All

BUV18X Overview

Power Bipolar Transistor, 90A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN

BUV18X Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)90 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
Base Number Matches1
NPN SILICON
SWITCHING TRANSISTOR
BUV18X
High Current, Fast Switching, Low VCE(sat).
Hermetic Metal TO3 Package.
Ideally suited for Motor Drive Control
and Power Switching Circuits
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Peak Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
120V
60V
7V
50A
90A
16A
40A
250W
1.43W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
0.7
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
S emelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9619
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com

BUV18X Related Products

BUV18X BUV18XR1
Description Power Bipolar Transistor, 90A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN Power Bipolar Transistor, 90A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
Is it Rohs certified? incompatible conform to
Maker TT Electronics plc TT Electronics plc
package instruction FLANGE MOUNT, O-MBFM-P2 HERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 90 A 90 A
Collector-emitter maximum voltage 60 V 60 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 20 20
JEDEC-95 code TO-204AE TO-204AE
JESD-30 code O-MBFM-P2 O-MBFM-P2
Number of components 1 1
Number of terminals 2 2
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 8 MHz 8 MHz
Base Number Matches 1 1
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