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BUV42.MODR1

Description
Power Bipolar Transistor, 12A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BUV42.MODR1 Overview

Power Bipolar Transistor, 12A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN

BUV42.MODR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionHERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)12 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee1
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
BUV42
Dimensions in mm (inches).
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
22.23
(0.875)
max.
16.64 (0.655)
17.15 (0.675)
1
2
Bipolar NPN Device.
V
CEO
= 250V
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
I
C
= 12A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Parameter
V
CEO
*
I
C(CONT)
h
FE
f
t
P
D
Test Conditions
Min.
Typ.
Max.
250
12
Units
V
A
-
Hz
@ (V
CE
/ I
C
)
120
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
31-Jul-02

BUV42.MODR1 Related Products

BUV42.MODR1
Description Power Bipolar Transistor, 12A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
Is it Rohs certified? conform to
Maker TT Electronics plc
package instruction HERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Code compliant
ECCN code EAR99
Shell connection COLLECTOR
Maximum collector current (IC) 12 A
Collector-emitter maximum voltage 250 V
Configuration SINGLE
JEDEC-95 code TO-204AA
JESD-30 code O-MBFM-P2
JESD-609 code e1
Number of components 1
Number of terminals 2
Package body material METAL
Package shape ROUND
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type NPN
Certification status Not Qualified
surface mount NO
Terminal surface TIN SILVER COPPER
Terminal form PIN/PEG
Terminal location BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED
Transistor component materials SILICON
Base Number Matches 1
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