BUX77X
MECHANICAL DATA
Dimensions in mm
Bipolar NPN Device in a
Hermetically Sealed TO66
Metal Package
6.35 (0.250)
8.64 (0.340)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
Bipolar NPN Device
V
CEO
= 80V
11.94 (0.470)
12.70 (0.500)
24.13 (0.95)
24.63 (0.97)
1
14.48 (0.570)
14.99 (0.590)
2
0.71 (0.028)
0.86 (0.034)
I
C
= 5A
FEATURES:
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
• HERMETIC METAL PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• JAN LEVEL SCREENING OPTIONS
TO66 (TO213AA)
PIN OUTS
Pin 1
– Base
Pin 2
– Collector
Pin 3
– Emitter
BUX77X
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO(sus)
V
EBO
I
C
I
B
P
tot
T
stg
T
j
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation at T
case
≤
25°C
Storage Temperature Range
Operating Junction Temperature Range
(I
E
= 0)
(I
B
= 0)
(I
C
= 0)
100V
80V
6V
5A
0.8A
40W
–65 to 200°C
–65 to 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 4297
Issue 1
BUX77X
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
I
CEO
I
CBO
I
EBO
V
CEO(sus)*
V
CES
V
CE(sat)*
V
EBO
V
BE(sat)*
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector – Emitter
Sustaining Voltage
(I
B
= 0)
(I
E
= 0)
(I
C
= 0)
(I
B
= 0)
Test Conditions
V
CE
= 60V
V
CE
= 80V
V
CE
= 80V
V
EB
= 4V
I
C
= 50mA
T
case
= 150°C
Min.
Typ.
Max. Unit
10
0.5
150
0.5
µA
µA
µA
V
V
1
V
V
1.3
V
80
100
I
B
= 0.5A
6
I
B
= 0.5A
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
T
case
= –40°C
V
CE
= 5V
70
50
30
25
1.5
0.3
0.7
175
Collector – Emitter Voltage (V
BE
= 0) I
C
= 2mA
Collector – Emitter Saturation Voltage I
C
= 5A
Base – Emitter Voltage
(I
C
= 0)
I
E
= 1mA
I
C
= 5A
I
C
= 0.5A
I
C
= 2A
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
I
C
= 5A
I
C
= 1A
I
C
= 0.5A
f = 20MHz
—
h
fe
t
on
t
off
Small Signal Current Gain
Turn–on Time
Turn–off Time
—
µs
I
C
= 5A, V
CC
= 40V
I
B1
= –I
B2
= 0.5A
*Pulsed : Pulse duration = 300
µs
, duty cycle = 1.5%
THERMAL DATA
R
THj-case
Thermal Resistance Junction – Case
4.4°C/W Max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 4297
Issue 1
Embedded System
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