BUF744
Silicon NPN High Voltage Switching Transistor
Features
D
D
D
D
D
D
D
D
D
Simple-sWitch-Off Transistor
(SWOT)
HIGH SPEED technology
Planar passivation
100 kHz switching rate
Very low switching losses
Very low dynamic saturation
Very low operating temperature
Optimized RBSOA
High reverse voltage
14283
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
T
case
= 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
g
Test Conditions
Symbol
V
CEO
V
CEW
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
400
500
700
9
8
12
4
6
50
150
–65 to +150
Unit
V
V
V
V
A
A
A
A
W
°
C
°
C
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
T
case
≤
25
°
C
Maximum Thermal Resistance
T
case
= 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
R
thJC
Value
2.5
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
1 (9)
BUF744
Electrical Characteristics
T
case
= 25°C, unless otherwise specified
Parameter
Collector cut-off current
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation voltage
g
Base-emitter saturation voltage
g
DC forward current transfer ratio
Test Conditions
V
CE
= 700 V
V
CE
= 700 V; T
case
= 150
°
C
I
C
= 500 mA; L = 125 mH;
I
measure
= 100 mA
I
E
= 1 mA
I
C
= 1.3 A; I
B
= 0.3 A
I
C
= 4 A; I
B
= 1.3 A
I
C
= 1.3 A; I
B
= 0.3 A
I
C
= 4 A; I
B
= 1.3 A
V
CE
= 2 V; I
C
= 10 mA
V
CE
= 2 V; I
C
= 1.3 A
V
CE
= 2 V; I
C
= 4 A
V
CE
= 5 V; I
C
= 8 A
V
S
= 50 V; L = 1 mH; I
C
= 8 A;
I
B1
= 2.7 A; –I
B2
= 0.8 A;
–V
BB
= 5 V
I
C
= 4 A; I
B
= 0.8 A; t = 1
m
s
I
C
= 4 A; I
B
= 0.8 A; t = 3
m
s
Symbol
I
CES
I
CES
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
CEsat
V
BEsat
V
BEsat
h
FE
h
FE
h
FE
h
FE
V
CEW
Min
Typ
Max
50
0.5
Unit
m
A
mA
V
V
V
V
V
V
400
9
0.1
0.2
0.9
1
18
18
0.2
0.4
1
1.2
Collector-emitter working voltage
15
12
6
4
500
V
Dynamic saturation voltage
y
g
V
CEsatdyn
V
CEsatdyn
7.5
1.5
15
4
V
V
2 (9)
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
BUF744
Switching Characteristics
T
case
= 25°C, unless otherwise specified
Parameter
Test Conditions
Resistive load (figure 2)
Turn on time
I
C
= 3 A; I
B1
= 0.7 A; –I
B2
= 1.5 A;
;
;
;
V
S
= 125 V
Storage time
Fall time
Inductive load (figure 3)
Storage time
I
C
= 3 A; I
B1
= 0.7 A; –I
B2
= 1.5 A;
V
S
= 125 V; V
clamp
= 300 V;
l
Fall time
–V
BE
= 5 V; L = 200
m
H; T
case
= 25
°
C
Storage time
I
C
= 3 A; I
B1
= 0.7 A; –I
B2
= 1.5 A;
V
S
= 125 V; V
clamp
= 300 V;
l
Fall time
–V
BE
= 5 V; L = 200
m
H; T
case
= 100
°
C
Symbol
t
on
t
s
t
f
t
s
t
f
t
s
t
f
Min
Typ
0.85
1
0.15
1.5
0.1
2
0.14
Max
1.2
1.7
0.3
2.5
0.2
Unit
m
s
m
s
m
s
m
s
m
s
m
s
m
s
94 8863
V
S2
+
10 V
I
B
I
C
w
I5
I
measure
I
C
C
V
S1
+
0 to 30 V
V
(BR)CEO
t
p
T
t
p
3 Pulses
+
L
C
V
CE
V
(BR)CEO
+
0.1
+
10 ms
I
(BR)R
100 m
W
Figure 1. Test circuit for V
(BR)CE0
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
3 (9)
BUF744
94 8852
I
B
I
B1
0
t
R
C
–I
B2
I
C
(1)
I
B1
R
B
V
BB
+
V
CE
I
B
V
CC
I
C
0.9 I
C
0.1 I
C
t
r
t
d
t
on
t
t
s
t
off
t
f
(1) Fast electronic switch
Figure 2. Test circuit for switching characteristics – resistive load
94 8853
I
B
I
B1
L
C
0
–I
B2
I
C
(2)
(1)
I
B1
R
B
V
BB
I
B
V
CE
V
clamp
I
C
V
CC
0.9 I
C
t
+
(1) Fast electronic switch
(2) Fast recovery rectifier
0.1 I
C
t
t
s
t
r
Figure 3. Test circuit for switching characteristics – inductive load
4 (9)
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
BUF744
Typical Characteristics
(T
case
= 25
_
C unless otherwise specified)
100.00
P
tot
– Total Power Dissipation ( W )
8
I
C
– Collector Current ( A )
2.5K/W
10.00
12.5K/W
6
1.00
25K/W
50K/W
0.10
R
thJA
=85K/W
0.01
4
0.1 x I
C
< I
B2
< 0.5 x I
C
V
CESat
< 2V
0
0
100
200
300
400
500
600
2
0
13716
25
50
75
100
125
150
95 10558
V
CE
– Collector Emitter Voltage ( V )
T
case
– Case Temperature (
°C
)
Figure 4. V
CEW
– Diagram
10
T
j
= 25°C
I - Collector Current (V)
8
1.4A
1A
800mA
6
4
200mA
2
0
0
94 9207
Figure 7. P
tot
vs.T
case
- Collector Emitter Saturation Voltage (V)
10
1
2A 3A
5A
600mA
400mA
4A
0.1
I
C
= 0.75A
1.25A
C
I
B
= 50mA
2
4
6
8
10
CEsat
0.01
0.01
0.1
1
10
V
CE
- Collector Emitter Voltage (V)
V
94 9208
I
B
- Base Current (A)
Figure 5. I
C
vs. V
CE
100
h - Forward DC Current Transfer Ratio
h - Forward DC Current Transfer Ratio
100
Figure 8. V
CEsat
vs. I
B
T
j
= 125°C
T
j
= 25°C
T
j
= –25°C
10
V
CE
= 10V
10
V
CE
= 5V
V
CE
= 2V
FE
1
0.01
0.1
1
10
94 9210
V
CE
= 2V
1
0.01
FE
0.1
1
10
94 9209
I
C
- Collector Current (A)
I
C
- Collector Current (A)
Figure 6. h
FE
vs. I
C
Figure 9. h
FE
vs. I
C
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
5 (9)
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