Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
| Parameter Name | Attribute value |
| Maker | Zetex Semiconductors |
| package instruction | CYLINDRICAL, O-PBCY-W3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.5 A |
| Collector-emitter maximum voltage | 350 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 15 |
| JESD-30 code | O-PBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 40 MHz |
| Base Number Matches | 1 |
| 2N6517STOA | 2N6517STOB | 2N6517STOF | 2N6517STOE | 2N6517STZ | |
|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN | Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN | Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN | Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN | Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN |
| Maker | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
| package instruction | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
| Collector-emitter maximum voltage | 350 V | 350 V | 350 V | 350 V | 350 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 15 | 15 | 15 | 15 | 15 |
| JESD-30 code | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 40 MHz | 40 MHz | 40 MHz | 40 MHz | 40 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | - |