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FMMT38C

Description
Small Signal Bipolar Transistor, 0.3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size111KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

FMMT38C Overview

Small Signal Bipolar Transistor, 0.3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

FMMT38C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage60 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)10000
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max1.25 V
Base Number Matches1
SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 – AUGUST 1996
FEATURES
* 60 Volt V
CEO
* Gain of 10K at I
C
=0.5 Amp
PARTMARKING DETAILS –
FMMT38A – 4J
FMMT38B – 5J
FMMT38C – 7J
FMMT38A
FMMT38B
FMMT38C
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
80
60
10
800
300
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static
Forward
Current
Transfer
Ratio
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
500
1000
2000
4000
5000
10000
80
60
10
100
100
1.25
1.8
MIN.
MAX.
V
V
V
nA
nA
V
V
UNIT
CONDITIONS.
I
C
=10 A , I
E
=0
I
C
=10mA, I
B
=0
I
E
=10 A , I
C
=0
V
CB
=60V, I
E
=0
V
EB
=8V, I
C
=0
I
C
=800mA, I
B
=8mA*
I
C
=800mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
2%
FMMT38A h
FE
FMMT38B
FMMT38C
3 - 100

*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
Spice parameter data is available upon request for this device



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