JANTX1N6640US datasheet, PDF - EEWORLD Datasheet

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JANTX1N6640US: DescriptionRectifier Diode, 1 Element, 0.3A, Silicon, SURFACE MOUNT PACKAGE-2; CategoryDiscrete semiconductor diode; File Size71KB，2 Pages; ManufacturerCompensated Devices Inc.

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Rectifier Diode, 1 Element, 0.3A, Silicon, SURFACE MOUNT PACKAGE-2

JANTX1N6640US Parametric

Parameter Name	Attribute value
Maker	Compensated Devices Inc.
package instruction	SURFACE MOUNT PACKAGE-2
Reach Compliance Code	unknown
Other features	METALLURGICALLY BONDED
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-XELF-R2
Number of components	1
Number of terminals	2
Maximum output current	0.3 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Guideline	MIL-19500/609D
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal form	WRAP AROUND
Terminal location	END
Base Number Matches	1

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• 1N6639US THRU 1N6641US AVAILABLE IN

JAN, JANTX, JANTXV

AND

JANS

PER MIL-PRF-19500/609

• SWITCHING DIODES

• NON-CAVITY GLASS PACKAGE

• METALLURGICALLY BONDED

1N6639US

1N6640US

1N6641US

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Operating Current: 300 mA

Derating: 4.6 mA/°C Above TEC = + 110°C

Surge Current: I

FSM

= 2.5A, Pw = 8.3ms

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise speciﬁed.

V BRR

@ 10 µA

V RWM

I R1

I R2

@ TA = +25

°C

@ TA = +150

°C

VR =

V RWM

nA dc

100

µA dc

100

T FR

= 200 mA

T RR

I R = 10 mA

I F = 10 mA

RL = 100

Ω

4.0

5.0

VR = 0

DIM

MILLIMETERS

MIN

MAX

1.78

2.16

0.48

0.71

4.19

4.95

0.08MIN.

INCHES

MIN MAX

0.070 0.085

0.019 0.028

0.165 0.195

0.003MIN.

TYPES

FIGURE 1

2.5

3.0

V(pk)

1N6639US

1N6640US

1N6641US

100

V(pk)

DESIGN DATA

CASE:

D-5D, Hermetically sealed glass

case, per MIL-PRF- 19500/609

FORWARD VOLTAGE:

TYPES

MIN

1N6639US

–

0.54

1N6640US

0.76

0.82

0.87

1N6641US

–

VdC

MAX

1.20

0.62

0.86

0.92

1.00

1.10

(PULSED)

500

100

200

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE: (R

OJEC):

50 ˚C/W maximum at L = 0

THERMAL IMPEDANCE: (Z

OJX): 25

˚C/W maximum

POLARITY:

Cathode end is banded

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) of this device is approximately

+ 4PPM / °C. The COE of the Mounting

Surface System should be selected to

provide a suitable match with this

device.

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

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