BUL146 datasheet, PDF - EEWORLD Datasheet

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BUL146: DescriptionPower Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size387KB，10 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BUL146 Overview

Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

BUL146 Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Other features	LEADFORM OPTIONS ARE AVAILABLE
Shell connection	COLLECTOR
Maximum collector current (IC)	6 A
Collector-based maximum capacity	150 pF
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	8
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	100 W
Maximum power dissipation(Abs)	100 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	14 MHz
Maximum off time (toff)	2500 ns
Maximum opening time (tons)	150 ns
VCEsat-Max	0.7 V
Base Number Matches	1

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUL146/D

™

Data Sheet

SWITCHMODE

™

Designer's

NPN Bipolar Power Transistor

For Switching Power Supply Applications

The BUL146/BUL146F have an applications specific state–of–the–art die designed

for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power

supplies for all types of electronic equipment. These high voltage/high speed

transistors offer the following:

•

Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain

— Fast Switching

— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

•

Full Characterization at 125°C

•

Parametric Distributions are Tight and Consistent Lot–to–Lot

•

Two Package Choices: Standard TO–220 or Isolated TO–220

•

BUL146F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369

MAXIMUM RATINGS

Rating

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

Collector Current — Continuous

— Peak(1)

Base Current — Continuous

— Peak(1)

RMS Isolated Voltage(2)

(for 1 sec, R.H. < 30%,

TC = 25°C)

Total Device Dissipation

Derate above 25°C

Operating and Storage Temperature

Test No. 1 Per Fig. 22a

Test No. 2 Per Fig. 22b

Test No. 3 Per Fig. 22c

(TC = 25°C)

Symbol

VCEO

VCES

VEBO

ICM

IBM

VISOL

BUL146

BUL146F

400

700

9.0

6.0

4.0

8.0

—

100

0.8

4500

3500

1500

0.32

Unit

Vdc

Adc

BUL146*

BUL146F*

*Motorola Preferred Device

POWER TRANSISTOR

6.0 AMPERES

700 VOLTS

40 and 100 WATTS

BUL146

CASE 221A–06

TO–220AB

TJ, Tstg

Watts

W/°C

°C

– 65 to 150

THERMAL CHARACTERISTICS

Rating

Thermal Resistance — Junction to Case

— Junction to Ambient

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

Symbol

θJC

θJA

BUL44

1.25

62.5

260

BUL44F

3.125

62.5

Unit

°C/W

°C

BUL146F

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)

Collector Cutoff Current (VCE = Rated VCEO, IB = 0)

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

(TC = 125°C)

Collector Cutoff Current

(VCE = 500 V, VEB = 0)

(TC = 125°C)

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

≤

10%.

(2) Proper strike and creepage distance must be provided.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions

— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred

devices are Motorola recommended choices for future use and best overall value.

Symbol

Min

Typ

Max

Unit

VCEO(sus)

ICEO

ICES

400

—

100

500

100

Vdc

µAdc

IEBO

µAdc

(continued)

REV 1

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

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