IRFY440C-QR-B datasheet, PDF - EEWORLD Datasheet

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IRFY440C-QR-B: DescriptionPower Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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IRFY440C-QR-B Overview

Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN

IRFY440C-QR-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	TO-220MC, 3 PIN
Reach Compliance Code	compliant
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	7 A
Maximum drain-source on-resistance	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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IRFY440C

Dimensions in mm (inches).

10.6 (0.42)

0.8

(0.03)

4.6 (0.18)

16.5 (0.65)

3.70 Dia. Nom

N-Channel MOSFET in

a Hermetically sealed

TO257AB Metal Package.

1.5(0.53)

10.6 (0.42)

1 2 3

12.70 (0.50 min)

V

DSS

= 500V

I

D

= 7A

R

DS(ON)

= 0.85Ω

Ω

All Semelab hermetically sealed products can be

processed in accordance with the requirements

of BS, CECC and JAN, JANTX, JANTXV and

JANS specifications.

2.54 (0.1)

BSC

1.0

(0.039)

2.70

(0.106)

TO257AB (TO220M)

PINOUTS

1 – Gate

2 – Drain

Case – Source

Parameter

V

DSS

I

D

P

D

R

DS(ON)

C

ISS

Q

g

t

td(on)

t

tr

t

td(off)

t

f

Drain – Source Breakdown Voltage

Continuous Drain Current

Power Dissipation

Static Drain – Source On–State Resistance

Input Capacitance

Total Gate Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Min.

Typ.

Max.

500

7

100

0.85

Units

V

A

W

Ω

pF

nC

ns

1300

68.5

21

73

72

51

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

13-Sep-02

IRFY440C-QR-B Related Products

	IRFY440C-QR-B	IRFY440C-JQR-BR1	IRFY440C-QR-BR1	IRFY440C	IRFY440C-JQR-B
Description	Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN	Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN	Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN	Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN	Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN
Is it Rohs certified?	incompatible	conform to	conform to	conform to	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	TO-220MC, 3 PIN	TO-220MC, 3 PIN	TO-220MC, 3 PIN	TO-220MC, 3 PIN	TO-220MC, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	500 V	500 V	500 V	500 V	500 V
Maximum drain current (ID)	7 A	7 A	7 A	7 A	7 A
Maximum drain-source on-resistance	0.85 Ω	0.85 Ω	0.85 Ω	0.85 Ω	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB	TO-257AB	TO-257AB	TO-257AB	TO-257AB
JESD-30 code	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED

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