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BUK9635-55A

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size69KB,9 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BUK9635-55A Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK9635-55A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codenot_compliant
ConfigurationSingle
Maximum drain current (Abs) (ID)34 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)85 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope available in
TO220AB and SOT404 . Using
’trench’ technology which features
very low on-state resistance. It is
intended for use in automotive and
general
purpose
switching
applications.
BUK9535-55A
BUK9635-55A
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 5 V
V
GS
= 10 V
MAX.
55
34
85
175
35
32
UNIT
V
A
W
˚C
mΩ
mΩ
PINNING
TO220AB & SOT404
PIN
1
2
3
DESCRIPTION
gate
drain
2
PIN CONFIGURATION
mb
tab
SYMBOL
d
g
3
SOT404
1 2 3
source
1
tab/mb drain
TO220AB
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
±V
GSM
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
t
p
≤50µS
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
55
55
10
15
34
24
133
85
175
UNIT
V
V
V
V
A
A
A
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
CONDITIONS
-
in free air
Minimum footprint, FR4
board
TYP.
-
60
50
MAX.
1.8
-
-
UNIT
K/W
K/W
K/W
February 2000
1
Rev 1.000
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