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BCW69R

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size175KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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BCW69R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BCW69R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
SOT23 PNP PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 – FEBRUARY 1995
PARTMARKING DETAILS –
BCW69
BCW70
BCW69R
BCW70R
– H1
– H2
– H4
– H5
BCW69
BCW70
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage (I
C
=2mA)
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base Cut-Off
Current
Base-Emitter Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
SYMBOL MIN.
I
CBO
V
BE
V
CE(sat)
V
BE(sat)
120
215
Transition Frequency
Collector Capacitance
Noise Figure
f
T
C
TC
N
-600
-80
-150
-720
-810
90
150
150
7
10
260
500
MHz
pF
dB
SYMBOL
V
CBO
V
CEO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
-100
-10
-750
-300
VALUE
-50
-50
-45
-5
-200
-100
330
-55 to +150
UNIT
µ
A
SOT23
UNIT
V
V
V
V
mA
A
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
CONDITIONS.
I
E
=0, V
CB
=-20V
I
E
=0,
V
CB
=-20V,T
j
=100°C
I
C
=-2.0mA, V
CE
=-5V
I
C
=-10mA, I
B
=-0.5mA
I
C
=-50mA, I
B
=-2.5mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-50mA, I
B
=-2.5mA
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-10mA, V
CE
=-5V
f =35MHz
I
E
=I
e
=0, V
CB
=-10V
f =1MHz
I
C
=-200
µ
A, V
CE
=-5V
R
S
=2K
, f =1KHz
B =200Hz
nA
mV
mV
mV
mV
mV
Static Forward
BCW69 h
FE
Current Transfer
Ratio
BCW70
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
PAGE NO

BCW69R Related Products

BCW69R
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Is it Rohs certified? conform to
Maker Zetex Semiconductors
package instruction SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN code EAR99
Maximum collector current (IC) 0.1 A
Collector-emitter maximum voltage 50 V
Configuration SINGLE
Minimum DC current gain (hFE) 120
JESD-30 code R-PDSO-G3
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 3
Maximum operating temperature 175 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type PNP
Maximum power dissipation(Abs) 0.35 W
Certification status Not Qualified
surface mount YES
Terminal surface Matte Tin (Sn)
Terminal form GULL WING
Terminal location DUAL
Transistor component materials SILICON
Nominal transition frequency (fT) 150 MHz
Base Number Matches 1
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