BST40 datasheet, PDF - EEWORLD Datasheet

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BST40: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size12KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BST40 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon

BST40 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	2 pF
Collector-emitter maximum voltage	250 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz
VCEsat-Max	0.5 V
Base Number Matches	1

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SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 – JANUARY 1996

7

COMPLEMENTARY TYPE – BST15

PARTMAKING DETAIL — AT2

BST40

C

E

C

B

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

300

250

5

1

500

1

-65 to +150

UNIT

V

A

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Emitter Cut-Off Current

Collector Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Output Capacitance

Input Capacitance

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

EBO

I

CBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

obo

C

ibo

40

70

2

30

MHz

pF

MIN.

300

250

5

10

20

0.5

1.3

MAX.

UNIT

V

µA

nA

V

CONDITIONS.

I

C

=100µA, I

E

=0

I

C

=1mA, I

B

=0*

I

E

=100µA, I

C

=0

V

EB

=5V, I

E

=0

V

CB

=300V

I

C

=50mA, I

B

=4mA

I

C

=50mA, I

B

=4mA

I

C

=20mA, V

CE

=10V*

I

C

=10mA, V

CE

=10V,

f=5MHz

V

CB

=10V, f=1MHz

V

EB

=5V, f=1MHz

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤

2%

For typical characteristics graphs see FMMTA42 datasheet.

3 - 78

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