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BSS138LT3

Description
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size166KB,4 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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BSS138LT3 Overview

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BSS138LT3 Parametric

Parameter NameAttribute value
MakerLRC
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.225 W
surface mountYES
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
N–Channel SOT–23
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Low Threshold Voltage (V
GS(th)
: 0.5V...1.5V) makes it ideal for low
voltage applications
Miniature SOT–23 Surface Mount Package saves board space
BSS138LT1
3
1
2
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
200 mAMPS
50 VOLTS
R
DS(on)
= 3.5
W
MAXIMUM RATINGS (T
A
= 25
o
C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp
10
µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J,
T
stg
R
θJA
T
L
Value
50
±
20
200
800
225
– 55 to
150
556
260
mW
°C
°C/W
°C
J1
W
1
2
N - Channel
3
Unit
Vdc
Vdc
mA
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
Gate
Source
J1 = Device Code
W = Work Week
ORDERING INFORMATION
Device
BSS138LT1
BSS138LT3
Package
SOT–23
SOT–23
Shipping
3000 Tape & Reel
10,000 Tape & Reel
bss138lt1-1/4

BSS138LT3 Related Products

BSS138LT3 BSS138LT1
Description Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Maker LRC LRC
Reach Compliance Code unknown unknow
Configuration Single Single
Maximum drain current (Abs) (ID) 0.2 A 0.2 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.225 W 0.225 W
surface mount YES YES
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