BFS17HTC datasheet, PDF - EEWORLD Datasheet

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BFS17HTC: DescriptionRF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size43KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BFS17HTC Overview

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

BFS17HTC Parametric

Parameter Name	Attribute value
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.025 A
Collector-based maximum capacity	1.5 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1300 MHz
Base Number Matches	1

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SOT23 NPN SILICON PLANAR

RF TRANSISTORS

ISSUE 4 – MARCH 2001

PARTMARKING DETAILS —

BFS17L - E1L

BFS17H - E1H

BFS17L

BFS17H

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

CBO

CEO

EBO

tot

stg

VALUE

2.5

330

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector Cut-Off

Current

Static Forward Current

Transfer Ratio

BFS17L

BFS17H

SYMBOL

CBO

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

=10V, I

=0,

amb

= 100°C

100

200

125

1.0

1.3

GHz

1.5

2.0

4.5

-45

=2.0mA, V

=1.0V

=2.0mA, V

=1.0V

=25mA, V

=1.0V

=2.0mA, V

=5.0V

f=500MHz

=25mA, V

=5.0V

f=500MHz

=2.0mA, V

=5V, f=1MHz

=10V, f=1MHz

=0.5V, f=1MHz

=2.0mA, V

=5.0V

=50

Ω

, f=500MHz

=10mA, V

=6.0V

=37.5

Ω

amb

=25°C

=100mV at f

=183MHz

=100mV at f

=200MHz

measured at f

(2q-p)

=217MHz

Transition

Frequency

Feedback Capacitance

Output Capacitance

Input Capacitance

Noise Figure

Intermodulation

Distortion

-C

obo

ibo

0.85

Spice parameter data is available upon request for this device

TBA

BFS17HTC Related Products

	BFS17HTC	BFQ31ATA
Description	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.025 A	0.1 A
Collector-based maximum capacity	1.5 pF	1.7 pF
Collector-emitter maximum voltage	15 V	15 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	100
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	1300 MHz	600 MHz

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